二维二氧化钒的多铁性

IF 2.9 3区 物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-08-27 DOI:10.1016/j.physe.2024.116090
Gang Xiao, Wen-Zhi Xiao
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引用次数: 0

摘要

二维(2D)多铁氧体材料因兼具铁弹性和铁磁性能而备受关注。我们通过密度泛函理论(DFT)计算,发现了一种新型二维多铁性二氧化钒(VO₂)单层,该单层呈现单斜相,空间群为 C2/m。能量、动态、热力学和机械分析表明,该单层具有极佳的稳定性,可以通过实验制备。电子能带的排列类似于 I 型异质结构。电子掺杂浓度为每个 V 原子 0.2 个电子时,居里温度(TC)从蒙特卡罗模拟估计的 11.2 K 显著升高到 184 K,并从半导体过渡到半金属性。此外,VO₂单层在每个原子 32 meV 的中等切换能垒下表现出 120° 的铁弹性切换,从而允许易磁化轴旋转 120°。我们的研究揭示了₂氧化物的内在多铁性,可为下一代机械/自旋电子器件的设计提供指导。
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Multiferroicity in a two-dimensional vanadium dioxide

Two-dimensional (2D) multiferroic materials have attracted great interest owing to the integration of ferroelastic and ferromagnetic properties. We identify a novel 2D multiferroic vanadium dioxide (VO₂) monolayer exhibiting a monoclinic phase with a C2/m space group using density functional theory (DFT) calculations. The energetic, dynamic, thermodynamic and mechanical analyses indicate that the monolayer exhibits excellent stability and can be prepared experimentally. The arrangement of the electronic energy bands is analogous to that of a type I heterostructure. The electron doping at a concentration of 0.2 electrons per V atom results in a significant increase in the Curie temperature (TC) from 11.2 to 184 K estimated by Monte Carlo simulations, and a transition from semiconductor to half-metallicity. In addition, the VO₂ monolayer exhibits 120° ferroelastic switching with a moderate switching energy barrier of 32 meV per atom, subsequently allowing 120° rotation of the easy magnetisation axis. Our work reveals the intrinsic multiferroicity of VO₂, which may provide a guidance on the design of next-generation mechanical/spintronic devices.

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来源期刊
CiteScore
7.30
自引率
6.10%
发文量
356
审稿时长
65 days
期刊介绍: Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures
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