{"title":"通过金属有机化学气相沉积在金(111)上生长的 MoS2 单层的低缺陷密度","authors":"","doi":"10.1016/j.micron.2024.103708","DOIUrl":null,"url":null,"abstract":"<div><p>Monolayers of transition metal dichalcogenides (TMDs) possess high potential for applications in novel electronic and optoelectronic devices and therefore the development of methods for their scalable growth is of high importance. Among different suggested approaches, metal-organic chemical vapor deposition (MOCVD) is the most promising one for technological applications because of its lower growth temperature compared to the most other methods, <em>e.g.</em>, conventional chemical vapor or atomic layer deposition (CVD, ALD). Here we demonstrate for the first time the epitaxial growth of MoS<sub>2</sub> monolayers on Au(111) by MOCVD at 450 °C. We confirm the high quality of the grown TMD monolayers down to the atomic scale using several complementary methods. These include Raman spectroscopy, non-contact atomic force microscopy (nc-AFM), X-ray photoelectron spectroscopy and scanning tunneling microscopy (STM). The topographic corrugation of the MoS<sub>2</sub> monolayer on Au(111), revealed in a moiré structure, was measured as ≈20 pm by nc-AFM. The estimated defect density calculated from STM images of the as-grown MoS<sub>2</sub> monolayers is in the order of 10<sup>12</sup> vacancies/cm<sup>2</sup>. The defects are mainly caused by single sulfur vacancies. Our approach is a step forward towards the technologically relevant growth of high-quality, large-area TMD monolayers.</p></div>","PeriodicalId":18501,"journal":{"name":"Micron","volume":null,"pages":null},"PeriodicalIF":2.5000,"publicationDate":"2024-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0968432824001252/pdfft?md5=b776c9f2d037f2977249c2f723f48961&pid=1-s2.0-S0968432824001252-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Low defect density in MoS2 monolayers grown on Au(111) by metal-organic chemical vapor deposition\",\"authors\":\"\",\"doi\":\"10.1016/j.micron.2024.103708\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Monolayers of transition metal dichalcogenides (TMDs) possess high potential for applications in novel electronic and optoelectronic devices and therefore the development of methods for their scalable growth is of high importance. Among different suggested approaches, metal-organic chemical vapor deposition (MOCVD) is the most promising one for technological applications because of its lower growth temperature compared to the most other methods, <em>e.g.</em>, conventional chemical vapor or atomic layer deposition (CVD, ALD). Here we demonstrate for the first time the epitaxial growth of MoS<sub>2</sub> monolayers on Au(111) by MOCVD at 450 °C. We confirm the high quality of the grown TMD monolayers down to the atomic scale using several complementary methods. These include Raman spectroscopy, non-contact atomic force microscopy (nc-AFM), X-ray photoelectron spectroscopy and scanning tunneling microscopy (STM). The topographic corrugation of the MoS<sub>2</sub> monolayer on Au(111), revealed in a moiré structure, was measured as ≈20 pm by nc-AFM. The estimated defect density calculated from STM images of the as-grown MoS<sub>2</sub> monolayers is in the order of 10<sup>12</sup> vacancies/cm<sup>2</sup>. The defects are mainly caused by single sulfur vacancies. Our approach is a step forward towards the technologically relevant growth of high-quality, large-area TMD monolayers.</p></div>\",\"PeriodicalId\":18501,\"journal\":{\"name\":\"Micron\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-08-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S0968432824001252/pdfft?md5=b776c9f2d037f2977249c2f723f48961&pid=1-s2.0-S0968432824001252-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micron\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0968432824001252\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MICROSCOPY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micron","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0968432824001252","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MICROSCOPY","Score":null,"Total":0}
Low defect density in MoS2 monolayers grown on Au(111) by metal-organic chemical vapor deposition
Monolayers of transition metal dichalcogenides (TMDs) possess high potential for applications in novel electronic and optoelectronic devices and therefore the development of methods for their scalable growth is of high importance. Among different suggested approaches, metal-organic chemical vapor deposition (MOCVD) is the most promising one for technological applications because of its lower growth temperature compared to the most other methods, e.g., conventional chemical vapor or atomic layer deposition (CVD, ALD). Here we demonstrate for the first time the epitaxial growth of MoS2 monolayers on Au(111) by MOCVD at 450 °C. We confirm the high quality of the grown TMD monolayers down to the atomic scale using several complementary methods. These include Raman spectroscopy, non-contact atomic force microscopy (nc-AFM), X-ray photoelectron spectroscopy and scanning tunneling microscopy (STM). The topographic corrugation of the MoS2 monolayer on Au(111), revealed in a moiré structure, was measured as ≈20 pm by nc-AFM. The estimated defect density calculated from STM images of the as-grown MoS2 monolayers is in the order of 1012 vacancies/cm2. The defects are mainly caused by single sulfur vacancies. Our approach is a step forward towards the technologically relevant growth of high-quality, large-area TMD monolayers.
期刊介绍:
Micron is an interdisciplinary forum for all work that involves new applications of microscopy or where advanced microscopy plays a central role. The journal will publish on the design, methods, application, practice or theory of microscopy and microanalysis, including reports on optical, electron-beam, X-ray microtomography, and scanning-probe systems. It also aims at the regular publication of review papers, short communications, as well as thematic issues on contemporary developments in microscopy and microanalysis. The journal embraces original research in which microscopy has contributed significantly to knowledge in biology, life science, nanoscience and nanotechnology, materials science and engineering.