Ultra-low-power consumption silicon electro-optic switch based on photonic crystal nanobeam cavity

Ultra-low-power consumption and high-speed integrated switches are highly desirable for future data centers and high-performance optical computers. In this study, we proposed an ultra-low-power consumption silicon electro-optic switch based on photonic crystal nanobeam cavities on a foundry platform. The proposed switch showed an ultra-low static-tuning power of 0.10 mW and a calculated dynamic switching power of 6.34 fJ/bit, with a compact footprint of 18 μm × 200 μm. Additionally, a 136-Gb/s four-level pulse amplitude modulation signal transmission experiment was carried out to verify the capability of the proposed electro-optic switch to support high-speed data transmission. The proposed device has the lowest static-tuning power consumption among silicon electro-optic switches and the highest data transmission rate. The results demonstrate the potential applications of this switch in high-performance optical computers, data center interconnects, optical neural networks, and programmable photonic circuits.