{"title":"砷化镓/砷化镓约束势垒的组成对嵌入砷化镓/砷化镓点阱异质结构中的砷化镓量子点发射的影响","authors":"","doi":"10.1016/j.optmat.2024.116032","DOIUrl":null,"url":null,"abstract":"<div><p>The emission of InAs quantum dots (QDs) grown on Al<sub>0.30</sub> Ga<sub>0.70</sub>As/GaAs heterostructures and integrated into additional capping/buffer quantum wells (QW), known as dot-in-a-well (DWELL) structures, has been investigated. Two different AlGaInAs confining barriers (CBs) and buffer layers (BLs) are compared. The first QD structure includes the Al<sub>0.30</sub> Ga<sub>0.70</sub>As CB (#1) and the In<sub>0.15</sub>Ga<sub>0.85</sub>As BL. The second QD structure consists of the Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB (#2) and the In<sub>0.25</sub>Ga<sub>0.75</sub>As BL. Comparison of photoluminescence (PL) spectra has revealed that the ground state (GS) emission band in the structure #2 with Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB is characterized by the lower peak energy, smaller PL linewidth (more homogeneous QD sizes) and higher GS emission intensity compared to that parameters in the structure #1 with Al<sub>0.30</sub> Ga<sub>0.70</sub>As CB. The smaller potential barriers at the Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB/QD interfaces in #2 lead to faster thermal decrease in the GS PL intensity at high temperatures compared with that in #1. High-resolution X-ray diffraction (HR-XRD) method was used for the study of the QD structures with the aim of monitoring the sizes and compositions of QDs and QWs. Numerical simulation of HR-XRD scans has shown that the material compositions of QDs and QW in #2 with Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB has not changed in the process of QD structure growth at high temperatures compared to those in #1. The obtained results are interesting for further improvement of InAs/GaAs QD structures for telecommunication technology and optoelectronic applications.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8000,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of composition of AlGaInAs confining barriers on emission of InAs quantum dots embedded in AlGaAs/GaAs dot-in-a-well heterostructures\",\"authors\":\"\",\"doi\":\"10.1016/j.optmat.2024.116032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The emission of InAs quantum dots (QDs) grown on Al<sub>0.30</sub> Ga<sub>0.70</sub>As/GaAs heterostructures and integrated into additional capping/buffer quantum wells (QW), known as dot-in-a-well (DWELL) structures, has been investigated. Two different AlGaInAs confining barriers (CBs) and buffer layers (BLs) are compared. The first QD structure includes the Al<sub>0.30</sub> Ga<sub>0.70</sub>As CB (#1) and the In<sub>0.15</sub>Ga<sub>0.85</sub>As BL. The second QD structure consists of the Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB (#2) and the In<sub>0.25</sub>Ga<sub>0.75</sub>As BL. Comparison of photoluminescence (PL) spectra has revealed that the ground state (GS) emission band in the structure #2 with Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB is characterized by the lower peak energy, smaller PL linewidth (more homogeneous QD sizes) and higher GS emission intensity compared to that parameters in the structure #1 with Al<sub>0.30</sub> Ga<sub>0.70</sub>As CB. The smaller potential barriers at the Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB/QD interfaces in #2 lead to faster thermal decrease in the GS PL intensity at high temperatures compared with that in #1. High-resolution X-ray diffraction (HR-XRD) method was used for the study of the QD structures with the aim of monitoring the sizes and compositions of QDs and QWs. Numerical simulation of HR-XRD scans has shown that the material compositions of QDs and QW in #2 with Al<sub>0.40</sub>Ga<sub>0.45</sub>In<sub>0.15</sub>As CB has not changed in the process of QD structure growth at high temperatures compared to those in #1. The obtained results are interesting for further improvement of InAs/GaAs QD structures for telecommunication technology and optoelectronic applications.</p></div>\",\"PeriodicalId\":19564,\"journal\":{\"name\":\"Optical Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2024-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925346724012151\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346724012151","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Impact of composition of AlGaInAs confining barriers on emission of InAs quantum dots embedded in AlGaAs/GaAs dot-in-a-well heterostructures
The emission of InAs quantum dots (QDs) grown on Al0.30 Ga0.70As/GaAs heterostructures and integrated into additional capping/buffer quantum wells (QW), known as dot-in-a-well (DWELL) structures, has been investigated. Two different AlGaInAs confining barriers (CBs) and buffer layers (BLs) are compared. The first QD structure includes the Al0.30 Ga0.70As CB (#1) and the In0.15Ga0.85As BL. The second QD structure consists of the Al0.40Ga0.45In0.15As CB (#2) and the In0.25Ga0.75As BL. Comparison of photoluminescence (PL) spectra has revealed that the ground state (GS) emission band in the structure #2 with Al0.40Ga0.45In0.15As CB is characterized by the lower peak energy, smaller PL linewidth (more homogeneous QD sizes) and higher GS emission intensity compared to that parameters in the structure #1 with Al0.30 Ga0.70As CB. The smaller potential barriers at the Al0.40Ga0.45In0.15As CB/QD interfaces in #2 lead to faster thermal decrease in the GS PL intensity at high temperatures compared with that in #1. High-resolution X-ray diffraction (HR-XRD) method was used for the study of the QD structures with the aim of monitoring the sizes and compositions of QDs and QWs. Numerical simulation of HR-XRD scans has shown that the material compositions of QDs and QW in #2 with Al0.40Ga0.45In0.15As CB has not changed in the process of QD structure growth at high temperatures compared to those in #1. The obtained results are interesting for further improvement of InAs/GaAs QD structures for telecommunication technology and optoelectronic applications.
期刊介绍：
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.
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