Study of the n− region formation process in n-on-p HgCdTe devices

The n⁻ region is crucial to the performance of n-on-p HgCdTe devices. However, the underlying mechanisms governing its formation process remain insufficiently elucidated in current literature. In this work, the influence of annealing temperature on the n⁻ region formation process was investigated systematically through experiments and one-dimensional (1D) simulation. The two key parameters, the transport rate of interstitials (Tr_I) and the diffusion coefficient of vacancies (D_V) were determined through the 1D model, and their accuracy was validated by experiments. The determination of Tr_I and D_V allows for more flexible and precise optimization of the n⁻ region in HgCdTe, thereby providing valuable guidance for cost-effective, high performance, and reliable preparation of HgCdTe detectors.