Xing Yang, Chong-Yu Wang, Wang-Qi Bao, Ze Li, Zi-Yuan Wang, Jing Feng, Zhen-Hua Ge
{"title":"通过控制晶界中的 Ag2Se 原位沉淀提高多晶 SnSe 的热电性能","authors":"Xing Yang, Chong-Yu Wang, Wang-Qi Bao, Ze Li, Zi-Yuan Wang, Jing Feng, Zhen-Hua Ge","doi":"10.1016/j.jmst.2024.08.009","DOIUrl":null,"url":null,"abstract":"<p>Boundary engineering has proven effective in enhancing the thermoelectric performance of materials. SnSe, known for its low thermal conductivity, has garnered significant interest; however, its application is hindered by poor electrical conductivity. Herein, the Ag<sub>8</sub>GeSe<sub>6</sub> is introduced into the p-type polycrystalline SnSe matrix to optimize the thermoelectric performance, and the in-situ Ag<sub>2</sub>Se precipitates are formed in grain boundaries, which play dual roles, acting as an electron attraction center for improving hole concentration and a phonon scattering center for reducing lattice thermal conductivity. It effectively decouples the thermal and electrical transport properties to optimize the thermoelectric performance. Importantly, the amount of Ag<sub>2</sub>Se can be controlled by adjusting the amount of Ag<sub>8</sub>GeSe<sub>6</sub> added to the SnSe matrix. The introduction of Ag<sub>8</sub>GeSe<sub>6</sub> enhances electrical conductivity due to the increased hole carrier caused by the introduced Ag<sup>+</sup> and the formed electron attraction center (in-situ Ag<sub>2</sub>Se precipitates). Based on the DFT calculations, the band gap of the Ag<sub>8</sub>GeSe<sub>6</sub>-doped samples is considerably decreased, facilitating carrier transport. As a result, the electrical transport properties increase to 808 μW m<sup>−1</sup> K<sup>−2</sup> at 823 K for SnSe + 0.5 wt% Ag<sub>8</sub>GeSe<sub>6</sub>. In addition, in-situ Ag<sub>2</sub>Se precipitates in grain boundaries strongly enhance phonon scattering, causing a decrease in lattice thermal conductivity. Furthermore, the presence of defects contributes to a reduction in lattice thermal conductivity. Specifically, the thermal conductivity of SnSe + 1.0 wt% Ag<sub>8</sub>GeSe<sub>6</sub> decreases to 0.29 W m<sup>−1</sup> K<sup>−1</sup> at 823 K. Consequently, SnSe + 0.5 wt% Ag<sub>8</sub>GeSe<sub>6</sub> obtains a high ZT value of 1.7 at 823 K and maintains a high average <em>ZT</em> value of 0.57 over the temperature range of 323−773 K. Additionally, the mechanical properties of Ag<sub>8</sub>GeSe<sub>6</sub>-doped also show an improvement. These advancements can be applied to energy supply applications during deep space exploration.</p>","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":null,"pages":null},"PeriodicalIF":11.2000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Boosting thermoelectric performance of polycrystalline SnSe by controlled in-situ Ag2Se precipitates in grain boundaries\",\"authors\":\"Xing Yang, Chong-Yu Wang, Wang-Qi Bao, Ze Li, Zi-Yuan Wang, Jing Feng, Zhen-Hua Ge\",\"doi\":\"10.1016/j.jmst.2024.08.009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Boundary engineering has proven effective in enhancing the thermoelectric performance of materials. SnSe, known for its low thermal conductivity, has garnered significant interest; however, its application is hindered by poor electrical conductivity. Herein, the Ag<sub>8</sub>GeSe<sub>6</sub> is introduced into the p-type polycrystalline SnSe matrix to optimize the thermoelectric performance, and the in-situ Ag<sub>2</sub>Se precipitates are formed in grain boundaries, which play dual roles, acting as an electron attraction center for improving hole concentration and a phonon scattering center for reducing lattice thermal conductivity. It effectively decouples the thermal and electrical transport properties to optimize the thermoelectric performance. Importantly, the amount of Ag<sub>2</sub>Se can be controlled by adjusting the amount of Ag<sub>8</sub>GeSe<sub>6</sub> added to the SnSe matrix. The introduction of Ag<sub>8</sub>GeSe<sub>6</sub> enhances electrical conductivity due to the increased hole carrier caused by the introduced Ag<sup>+</sup> and the formed electron attraction center (in-situ Ag<sub>2</sub>Se precipitates). Based on the DFT calculations, the band gap of the Ag<sub>8</sub>GeSe<sub>6</sub>-doped samples is considerably decreased, facilitating carrier transport. As a result, the electrical transport properties increase to 808 μW m<sup>−1</sup> K<sup>−2</sup> at 823 K for SnSe + 0.5 wt% Ag<sub>8</sub>GeSe<sub>6</sub>. In addition, in-situ Ag<sub>2</sub>Se precipitates in grain boundaries strongly enhance phonon scattering, causing a decrease in lattice thermal conductivity. Furthermore, the presence of defects contributes to a reduction in lattice thermal conductivity. Specifically, the thermal conductivity of SnSe + 1.0 wt% Ag<sub>8</sub>GeSe<sub>6</sub> decreases to 0.29 W m<sup>−1</sup> K<sup>−1</sup> at 823 K. Consequently, SnSe + 0.5 wt% Ag<sub>8</sub>GeSe<sub>6</sub> obtains a high ZT value of 1.7 at 823 K and maintains a high average <em>ZT</em> value of 0.57 over the temperature range of 323−773 K. Additionally, the mechanical properties of Ag<sub>8</sub>GeSe<sub>6</sub>-doped also show an improvement. These advancements can be applied to energy supply applications during deep space exploration.</p>\",\"PeriodicalId\":16154,\"journal\":{\"name\":\"Journal of Materials Science & Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":11.2000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science & Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.jmst.2024.08.009\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science & Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jmst.2024.08.009","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Boosting thermoelectric performance of polycrystalline SnSe by controlled in-situ Ag2Se precipitates in grain boundaries
Boundary engineering has proven effective in enhancing the thermoelectric performance of materials. SnSe, known for its low thermal conductivity, has garnered significant interest; however, its application is hindered by poor electrical conductivity. Herein, the Ag8GeSe6 is introduced into the p-type polycrystalline SnSe matrix to optimize the thermoelectric performance, and the in-situ Ag2Se precipitates are formed in grain boundaries, which play dual roles, acting as an electron attraction center for improving hole concentration and a phonon scattering center for reducing lattice thermal conductivity. It effectively decouples the thermal and electrical transport properties to optimize the thermoelectric performance. Importantly, the amount of Ag2Se can be controlled by adjusting the amount of Ag8GeSe6 added to the SnSe matrix. The introduction of Ag8GeSe6 enhances electrical conductivity due to the increased hole carrier caused by the introduced Ag+ and the formed electron attraction center (in-situ Ag2Se precipitates). Based on the DFT calculations, the band gap of the Ag8GeSe6-doped samples is considerably decreased, facilitating carrier transport. As a result, the electrical transport properties increase to 808 μW m−1 K−2 at 823 K for SnSe + 0.5 wt% Ag8GeSe6. In addition, in-situ Ag2Se precipitates in grain boundaries strongly enhance phonon scattering, causing a decrease in lattice thermal conductivity. Furthermore, the presence of defects contributes to a reduction in lattice thermal conductivity. Specifically, the thermal conductivity of SnSe + 1.0 wt% Ag8GeSe6 decreases to 0.29 W m−1 K−1 at 823 K. Consequently, SnSe + 0.5 wt% Ag8GeSe6 obtains a high ZT value of 1.7 at 823 K and maintains a high average ZT value of 0.57 over the temperature range of 323−773 K. Additionally, the mechanical properties of Ag8GeSe6-doped also show an improvement. These advancements can be applied to energy supply applications during deep space exploration.
期刊介绍:
Journal of Materials Science & Technology strives to promote global collaboration in the field of materials science and technology. It primarily publishes original research papers, invited review articles, letters, research notes, and summaries of scientific achievements. The journal covers a wide range of materials science and technology topics, including metallic materials, inorganic nonmetallic materials, and composite materials.