{"title":"α-In2Se3 反铁电隧道结的量子输运模拟","authors":"","doi":"10.1016/j.physe.2024.116093","DOIUrl":null,"url":null,"abstract":"<div><p>Due to semiconductor characteristics and non-volatile ferroelectricity, two-dimensional (2D) In<sub>2</sub>Se<sub>3</sub> are considered as potential candidates for next-generation storage and computing devices. Based on first principles calculations, we designed antiferroelectric tunnel junctions (AFTJs) using α-In<sub>2</sub>Se<sub>3</sub> as channels. The tunneling barrier height is controlled by the antiferroelectric to ferroelectric (AFE-FE) phase transition of the channel. A maximum current ratio up to 426 is predicted between the AFE and FE phases, enabling the two distinct memory states. By constructing two AFTJs into a calculation unit, the total current can either be fully turned on/off or function as XNOR logic with bias as inputs. Our research provides a new approach to implementing integrated storage and computing devices, making it possible for efficient data-centric applications in the era of big data.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum transport simulations of α-In2Se3 antiferroelectric tunnel junctions\",\"authors\":\"\",\"doi\":\"10.1016/j.physe.2024.116093\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Due to semiconductor characteristics and non-volatile ferroelectricity, two-dimensional (2D) In<sub>2</sub>Se<sub>3</sub> are considered as potential candidates for next-generation storage and computing devices. Based on first principles calculations, we designed antiferroelectric tunnel junctions (AFTJs) using α-In<sub>2</sub>Se<sub>3</sub> as channels. The tunneling barrier height is controlled by the antiferroelectric to ferroelectric (AFE-FE) phase transition of the channel. A maximum current ratio up to 426 is predicted between the AFE and FE phases, enabling the two distinct memory states. By constructing two AFTJs into a calculation unit, the total current can either be fully turned on/off or function as XNOR logic with bias as inputs. Our research provides a new approach to implementing integrated storage and computing devices, making it possible for efficient data-centric applications in the era of big data.</p></div>\",\"PeriodicalId\":20181,\"journal\":{\"name\":\"Physica E-low-dimensional Systems & Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica E-low-dimensional Systems & Nanostructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1386947724001978\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947724001978","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0
摘要
由于二维（2D）In2Se3 具有半导体特性和非易失性铁电性，因此被认为是下一代存储和计算设备的潜在候选材料。基于第一性原理计算，我们设计了以α-In2Se3为通道的反铁电隧道结（AFTJ）。隧道势垒高度由通道的反铁电到铁电（AFE-FE）相变控制。据预测，AFE 和 FE 相之间的最大电流比可高达 426，从而实现了两种不同的存储状态。通过将两个 AFTJ 构建为一个计算单元，总电流既可以完全打开/关闭，也可以作为输入偏置的 XNOR 逻辑运算。我们的研究为实现集成存储和计算设备提供了一种新方法，使大数据时代以数据为中心的高效应用成为可能。
Quantum transport simulations of α-In2Se3 antiferroelectric tunnel junctions
Due to semiconductor characteristics and non-volatile ferroelectricity, two-dimensional (2D) In2Se3 are considered as potential candidates for next-generation storage and computing devices. Based on first principles calculations, we designed antiferroelectric tunnel junctions (AFTJs) using α-In2Se3 as channels. The tunneling barrier height is controlled by the antiferroelectric to ferroelectric (AFE-FE) phase transition of the channel. A maximum current ratio up to 426 is predicted between the AFE and FE phases, enabling the two distinct memory states. By constructing two AFTJs into a calculation unit, the total current can either be fully turned on/off or function as XNOR logic with bias as inputs. Our research provides a new approach to implementing integrated storage and computing devices, making it possible for efficient data-centric applications in the era of big data.
期刊介绍：
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures
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