{"title":"4H-SiC 外延片中堆叠断层复合源的结构分析","authors":"Shohei Hayashi , Hideki Sako , Junji Senzaki","doi":"10.1016/j.jcrysgro.2024.127880","DOIUrl":null,"url":null,"abstract":"<div><p>The origin of expanded stacking fault complex (SFC) was investigated by high spatial resolution observation using transmission electron microscopy (TEM) in detail. From TEM observations and their analysis of the origin of expanded SFC, the physical mechanism of expansion from threading screw dislocation (TSD) in the substrate to SFC in the epitaxial layer was clarified. The TSD converted into four Frank partial dislocations (PDs) near the interface between epitaxial layer and substrate, and three PDs merged and formed prismatic stacking faults and the edge of basal-plane staking faults. In addition, scanning TEM (STEM) analysis revealed to the stacking sequence of SFs and the structures of PDs.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127880"},"PeriodicalIF":1.7000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural analysis of stacking fault complex origin in 4H-SiC epitaxial wafer\",\"authors\":\"Shohei Hayashi , Hideki Sako , Junji Senzaki\",\"doi\":\"10.1016/j.jcrysgro.2024.127880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The origin of expanded stacking fault complex (SFC) was investigated by high spatial resolution observation using transmission electron microscopy (TEM) in detail. From TEM observations and their analysis of the origin of expanded SFC, the physical mechanism of expansion from threading screw dislocation (TSD) in the substrate to SFC in the epitaxial layer was clarified. The TSD converted into four Frank partial dislocations (PDs) near the interface between epitaxial layer and substrate, and three PDs merged and formed prismatic stacking faults and the edge of basal-plane staking faults. In addition, scanning TEM (STEM) analysis revealed to the stacking sequence of SFs and the structures of PDs.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":\"648 \",\"pages\":\"Article 127880\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824003154\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824003154","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Structural analysis of stacking fault complex origin in 4H-SiC epitaxial wafer
The origin of expanded stacking fault complex (SFC) was investigated by high spatial resolution observation using transmission electron microscopy (TEM) in detail. From TEM observations and their analysis of the origin of expanded SFC, the physical mechanism of expansion from threading screw dislocation (TSD) in the substrate to SFC in the epitaxial layer was clarified. The TSD converted into four Frank partial dislocations (PDs) near the interface between epitaxial layer and substrate, and three PDs merged and formed prismatic stacking faults and the edge of basal-plane staking faults. In addition, scanning TEM (STEM) analysis revealed to the stacking sequence of SFs and the structures of PDs.
期刊介绍：
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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