{"title":"受拉什巴自旋轨道耦合调制的单层半导体微结构中电子随自旋变化的 Goos-Hänchen 漂移","authors":"","doi":"10.1016/j.rinp.2024.107958","DOIUrl":null,"url":null,"abstract":"<div><p>We theoretically investigate Goos-Hänchen effect for electron in single-layered semiconductor microstructure (SLSM) modulated by Rashba spin–orbit coupling (SOC). Due to the SOC effect, GH displacement is obviously dependent on spins, which allows electron spins to be separated in space dimension and results in spin polarization of electrons in semiconductors. Spin polarization ratio is associated with incident energy, incident direction and in-plane wave vector, e.g., it reaches maximum at resonance, but no spin polarization effect appears at normal incidence. In particular, both magnitude and sign of spin polarization ratio are controlled by external electric field or semiconductor-layer thickness, therefore, a manipulable spatial electron-spin splitter is obtained for semiconductor spintronics device applications.</p></div>","PeriodicalId":21042,"journal":{"name":"Results in Physics","volume":null,"pages":null},"PeriodicalIF":4.4000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2211379724006430/pdfft?md5=1ad564e6edadc446a401f6413627184a&pid=1-s2.0-S2211379724006430-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Spin-dependent Goos-Hänchen shift for electron in single-layered semiconductor microstructure modulated by Rashba spin–orbit coupling\",\"authors\":\"\",\"doi\":\"10.1016/j.rinp.2024.107958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We theoretically investigate Goos-Hänchen effect for electron in single-layered semiconductor microstructure (SLSM) modulated by Rashba spin–orbit coupling (SOC). Due to the SOC effect, GH displacement is obviously dependent on spins, which allows electron spins to be separated in space dimension and results in spin polarization of electrons in semiconductors. Spin polarization ratio is associated with incident energy, incident direction and in-plane wave vector, e.g., it reaches maximum at resonance, but no spin polarization effect appears at normal incidence. In particular, both magnitude and sign of spin polarization ratio are controlled by external electric field or semiconductor-layer thickness, therefore, a manipulable spatial electron-spin splitter is obtained for semiconductor spintronics device applications.</p></div>\",\"PeriodicalId\":21042,\"journal\":{\"name\":\"Results in Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.4000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2211379724006430/pdfft?md5=1ad564e6edadc446a401f6413627184a&pid=1-s2.0-S2211379724006430-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Results in Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2211379724006430\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Results in Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2211379724006430","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Spin-dependent Goos-Hänchen shift for electron in single-layered semiconductor microstructure modulated by Rashba spin–orbit coupling
We theoretically investigate Goos-Hänchen effect for electron in single-layered semiconductor microstructure (SLSM) modulated by Rashba spin–orbit coupling (SOC). Due to the SOC effect, GH displacement is obviously dependent on spins, which allows electron spins to be separated in space dimension and results in spin polarization of electrons in semiconductors. Spin polarization ratio is associated with incident energy, incident direction and in-plane wave vector, e.g., it reaches maximum at resonance, but no spin polarization effect appears at normal incidence. In particular, both magnitude and sign of spin polarization ratio are controlled by external electric field or semiconductor-layer thickness, therefore, a manipulable spatial electron-spin splitter is obtained for semiconductor spintronics device applications.
Results in PhysicsMATERIALS SCIENCE, MULTIDISCIPLINARYPHYSIC-PHYSICS, MULTIDISCIPLINARY
CiteScore
8.70
自引率
9.40%
发文量
754
审稿时长
50 days
期刊介绍:
Results in Physics is an open access journal offering authors the opportunity to publish in all fundamental and interdisciplinary areas of physics, materials science, and applied physics. Papers of a theoretical, computational, and experimental nature are all welcome. Results in Physics accepts papers that are scientifically sound, technically correct and provide valuable new knowledge to the physics community. Topics such as three-dimensional flow and magnetohydrodynamics are not within the scope of Results in Physics.
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3. Letters to the Editor: Letters discussing a recent article published in Results in Physics are welcome. These are objective, constructive, or educational critiques of papers published in Results in Physics. Accepted letters will be sent to the author of the original paper for a response. Each letter and response is published together. Letters should be received within 8 weeks of the article''s publication. They should not exceed 750 words of text and 10 references.