Controlling the spontaneous emission of the telecom O-band centers in Silicon-on-Insulator with coherent dipole-quadrupole interactions on a silicon pillar lattice

The G-center in silicon-on-insulator (SOI) has emerged as a relevant single photon source due to the zero-phonon line at 1278 nm, matching the O-band of optical telecommunication wavelengths. Due to the weak emission of the G-center from planar SOI, it is necessary to enhance its emission, in terms of collection efficiency and fluorescence enhancement, to further study its optical properties for application in quantum technologies. Here we design a fabrication-ready SOI Mie-resonator made of a lattice of silicon nanopillars on silica to achieve the spontaneous emission enhancement of single G-centers. Using Si nanopillars lattice on silica with period and dimensions optimized, owing to the coherent superposition of the electric dipolar and magnetic quadrupolar electromagnetic Mie-scattering moments of the individual pillars to the periodic lattice, we show the G-center emission/decay rate enhancement averaged over it's possible dipole orientations is about 13 times compared to bulk. This corresponds to a fluorescence enhancement of about 125 times compared to bulk and about 5-6 times compared to an optimized single pillar with photon collection with a confocal objective. These results provide a fabrication pathway for out-of-plane single photon collection from the SOI G-center or other telecom O-band single-photon sources for their potential deployment in CMOS-compatible quantum optical technologies.