拓扑莫伊里表面态上具有高阶范霍夫奇点的切尔带

IF 3.7 2区 物理与天体物理 Q1 Physics and Astronomy Physical Review B Pub Date : 2024-09-13 DOI:10.1103/physrevb.110.115125
Lakshmi Pullasseri, Luiz H. Santos
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引用次数: 0

摘要

在二维电子晶格中,费米面拓扑结构的变化(Lifshitz 转变)会导致以电子态密度发散为特征的范霍夫奇点。范霍夫奇点能增强电子相互作用的效果,为探索新型相关电子态提供了一个平台。在这项工作中,我们研究了三维拓扑绝缘体表面拓扑切尔带的出现,它承载着以幂律发散态密度为特征的高阶范霍夫奇点。在 Bi2Se3 和 Bi2Te3 等拓扑绝缘体家族中,这些奇点可能是由于靠近铁磁绝缘体而诱发的时间逆转破坏泽曼场与表面电子上的时间逆转不变摩尔势之间的相互作用而产生的。我们建立了接近电荷中性的切尔带,其切尔数为 C=±1,在受泽曼和摩尔势能尺度控制的摩尔布里渊区山谷上还拥有高阶范霍夫奇点的流形,从而揭示了实现拓扑带中奇异的李夫希兹跃迁的平台。此外,我们还证明了在 Lifshitz 转变附近态密度的强峰值会引起低温本征反常霍尔电导率的特征,从而为通过反常输运测量来探测切尔带中的范霍夫奇点提供了一条途径。
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Chern bands with higher-order Van Hove singularities on topological moiré surface states
In two-dimensional electronic lattices, changes in the topology of the Fermi surface (Lifshitz transitions) lead to Van Hove singularities characterized by a divergence in the electronic density of states. Van Hove singularities can enhance the effect of electronic interactions, providing a platform to explore novel correlated electronic states. In this work, we investigate the emergence of topological Chern bands on the surface of three-dimensional topological insulators, which host higher-order Van Hove singularities that are characterized by the power-law diverging density of states. These singularities can arise from the interplay between a time-reversal-breaking Zeeman field induced by proximity to a ferromagnetic insulator and a time-reversal-invariant moiré potential on the surface electrons, created by quintuple layer misalignment in a family of topological insulators such as Bi2Se3 and Bi2Te3, which host a single surface Dirac fermion. We establish the onset of Chern bands near charge neutrality with Chern numbers C=±1 that also possess a manifold of higher-order Van Hove singularities on the moiré Brillouin zone valleys controlled by the Zeeman and moiré potential energy scales, unveiling a platform to realize exotic Lifshitz transitions in topological bands. Furthermore, we show that the strong peaks in the density of states in the vicinity of Lifshitz transitions give rise to characteristic features in the low-temperature intrinsic anomalous Hall conductivity, yielding a path to probe Van Hove singularities in Chern bands through anomalous transport measurements.
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来源期刊
Physical Review B
Physical Review B 物理-物理:凝聚态物理
CiteScore
6.70
自引率
32.40%
发文量
0
审稿时长
3.0 months
期刊介绍: Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter
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