{"title":"L$ 波段低噪声放大器易受带外 HPM 影响的问题","authors":"Mingwen Zhang;Chunguang Ma;Ruilong Song;Yong Luo","doi":"10.1109/TPS.2024.3439130","DOIUrl":null,"url":null,"abstract":"In this article, the radio frequency (RF) performance degradation induced by out-of-band high-power microwave (HPM) is studied by simulation and experiment. The latent threat of the X-band HPM to the L-band low-noise amplifier (LNA) is verified by experiments. Due to the nonlinearity of active devices, the gain decreases under HPM inference, the nonlinear response of the LNA is investigated from the physical model, and the injection experiment shows that both the duty ratio and peak power of the HPM significantly influence the LNA gain.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 6","pages":"2050-2058"},"PeriodicalIF":1.3000,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vulnerability of L-Band LNA to the Out-of-Band HPM\",\"authors\":\"Mingwen Zhang;Chunguang Ma;Ruilong Song;Yong Luo\",\"doi\":\"10.1109/TPS.2024.3439130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, the radio frequency (RF) performance degradation induced by out-of-band high-power microwave (HPM) is studied by simulation and experiment. The latent threat of the X-band HPM to the L-band low-noise amplifier (LNA) is verified by experiments. Due to the nonlinearity of active devices, the gain decreases under HPM inference, the nonlinear response of the LNA is investigated from the physical model, and the injection experiment shows that both the duty ratio and peak power of the HPM significantly influence the LNA gain.\",\"PeriodicalId\":450,\"journal\":{\"name\":\"IEEE Transactions on Plasma Science\",\"volume\":\"52 6\",\"pages\":\"2050-2058\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2024-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Plasma Science\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10635002/\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, FLUIDS & PLASMAS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Plasma Science","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/10635002/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, FLUIDS & PLASMAS","Score":null,"Total":0}
引用次数: 0
摘要
本文通过仿真和实验研究了带外大功率微波(HPM)引起的射频(RF)性能下降。实验验证了 X 波段 HPM 对 L 波段低噪声放大器(LNA)的潜在威胁。由于有源器件的非线性,在 HPM 的推断下增益会下降,从物理模型中研究了 LNA 的非线性响应,注入实验表明 HPM 的占空比和峰值功率都会显著影响 LNA 的增益。
Vulnerability of L-Band LNA to the Out-of-Band HPM
In this article, the radio frequency (RF) performance degradation induced by out-of-band high-power microwave (HPM) is studied by simulation and experiment. The latent threat of the X-band HPM to the L-band low-noise amplifier (LNA) is verified by experiments. Due to the nonlinearity of active devices, the gain decreases under HPM inference, the nonlinear response of the LNA is investigated from the physical model, and the injection experiment shows that both the duty ratio and peak power of the HPM significantly influence the LNA gain.
期刊介绍:
The scope covers all aspects of the theory and application of plasma science. It includes the following areas: magnetohydrodynamics; thermionics and plasma diodes; basic plasma phenomena; gaseous electronics; microwave/plasma interaction; electron, ion, and plasma sources; space plasmas; intense electron and ion beams; laser-plasma interactions; plasma diagnostics; plasma chemistry and processing; solid-state plasmas; plasma heating; plasma for controlled fusion research; high energy density plasmas; industrial/commercial applications of plasma physics; plasma waves and instabilities; and high power microwave and submillimeter wave generation.