氧空位弛豫诱导铁电负容场效应晶体管的磁滞行为

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-09-04 DOI:10.1007/s11664-024-11396-z
Bingtao Liu, Changmeng Huan, Yongqing Cai, Qingqing Ke
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引用次数: 0

摘要

在铁电负电容场效应晶体管(NCFET)中观察到的磁滞窗口一直是开发可靠逻辑电路过程中的一个难题,往往会导致异常工作状态。尽管其意义重大,但驱动这种滞后现象的潜在因素仍然难以捉摸。在本研究中,我们根据基于表面电位的物理模型,结合 Mott-Gurney 定律,采用准静态 L-K 方程来研究 VO++ 迁移对 NCFET 磁滞行为的影响。与原始 NCFET 相比,VO++ 参与的样品在反向和正向扫描时的峰值电压相差 1.3 V。这一结果清楚地表明,带电氧空位的弛豫会显著影响外加扫描电压下的阈值电压,从而为 NCFET 出现磁滞窗口提供了合理的解释。有人提出用含有高迁移率离子的缓冲层取代传统的氧化层来调整滞后窗口。重要的是,与理论预测一致,离子迁移率的增加导致 NCFET 中观察到的磁滞窗口大幅减小。我们提出的物理机制阐明了空间电荷诱导的磁滞行为,为减轻磁滞效应提供了新的见解,从而推动了 NCFET 在逻辑电路中的潜在应用。
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The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors

Hysteresis window observed in ferroelectric negative capacitance field-effect transistors (NCFETs) have been a persistent challenge in the development of reliable logic circuits, often leading to abnormal operational conditions. Despite its significance, the underlying factors driving this hysteresis phenomenon remain elusive. In this study, we employ the quasi-static L–K equation in conjunction with the Mott–Gurney law to study the impact of VO++ migration on the hysteresis behavior of NCFETs, based on a surface potential-based physical model. Compared with pristine NCFET, the difference of peak voltages in value of 1.3 V was achieved in VO++-involved sample upon reverse and forwards scanning. This result clearly suggests that the relaxation of charged oxygen vacancies significantly affects the threshold voltage under applied sweeping voltages, providing a plausible explanation for the emergence of hysteresis windows in NCFETs. A replacement of the conventional oxide layer with a buffer layer containing high-mobility ions is proposed to adjust the hysteresis window. Importantly, in accordance with the theoretical predictions, the increased ion mobility results in a substantial reduction in the hysteresis window observed in NCFETs. Our proposed physical mechanism, elucidating the space-charge-induced hysteresis behavior, provides fresh insights for mitigating hysteresis effects, thereby advancing the potential applications of NCFETs in logic circuits.

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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