200 MeV Ag+15 离子辐照 ZnO-BaTiO3 纳米复合薄膜铁电特性的界面诱导改变

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-08-15 DOI:10.1007/s11664-024-11367-4
Hetal Kundalia, Ashish Ravalia, Ramcharan Meena, K. Asokan, Brinda Vyas, D. G. Kuberkar
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引用次数: 0

摘要

研究人员对具有 0.6ZnO-0.4BaTiO3/Al2O3 优化组合的纳米复合薄膜进行了研究,以了解迅猛重离子 (SHI) 诱导的改性对界面混合激发的铁电特性的影响。XRD 测量结果表明,原始薄膜中存在 ZnO 和 BaTiO3 相,经过辐照后,这些相发生了改变。用原子力显微镜(AFM)研究了 SHI 辐照诱导的表面改性,发现随着辐照剂量的增加,薄膜表面出现了纳米棒状和小丘状的微观结构。使用 RBS 光谱法研究了薄膜厚度和元素组成的变化,在 5 × 1010 离子/平方厘米辐照的薄膜中发现了 ~ 25 纳米的混合区,该混合区随着离子通量的增加而增大。铁电(P-E)环路显示磁滞特性发生了显著变化,而这种变化是基于表面形貌的改变,以及负责空间电荷区的钨锌结构 ZnO 和包晶结构 BaTiO3 之间的界面。
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Interface-Induced Modifications in the Ferroelectric properties of 200 MeV Ag+15 Ion-Irradiated ZnO-BaTiO3 Nanocomposite Films

Studies on nanocomposite films with an optimized composition of 0.6ZnO-0.4BaTiO3/Al2O3 were carried out to understand the effect of swift heavy ion (SHI)-induced modifications on the ferroelectric properties inspired by interface mixing. XRD measurements showed the presence of ZnO and BaTiO3 phases in pristine film which was modified by irradiation. Surface modifications induced by SHI irradiation, as studied using AFM, revealed the evolution of nanosized rod and hillock-like microstructure on the film surface with the increase in irradiation dose. The variations in film thickness and elemental compositions were studied using RBS spectrometry, and an intermixing zone ~ 25 nm was identified in the film irradiated by 5 × 1010 ions/cm2 which increased with the ion fluence. Ferroelectric (P-E) loops showed a significant change in the hysteresis characteristics which was understood on the basis of modifications in the surface morphology and the interface between the wurtzite-structured ZnO and the perovskite-structured BaTiO3 responsible for the space charge region.

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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