(In,Ga)砷纳米线自发形成核壳结构的动力学

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED Technical Physics Letters Pub Date : 2024-08-29 DOI:10.1134/s1063785023170224

N. V. Sibirev, Y. S. Berdnikov, I. V. Shtrom, E. V. Ubyivovk, R. R. Reznik, G. E. Cirlin

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引用次数: 0

摘要

摘要提出了通过分子束外延生长的(In,Ga)As 纳米线自发形成核壳结构的模型，而没有独立的径向生长。在该模型的框架内，拟合了 In 在纳米线轴向的分布。

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Kinetics of Spontaneous Formation of Core-Shell Structure in (In,Ga)As Nanowires

Abstract—A model of spontaneous formation of the core-shell structure in (In,Ga)As nanowire grown via molecular beam epitaxy without independent radial growth is proposed. Within the framework of the proposed model, the distribution of In across the axis of the nanowire was fitted.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.