氩离子照射下硅纳米线的非晶化现象

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED Technical Physics Letters Pub Date : 2024-08-29 DOI:10.1134/s1063785023170121

A. V. Kononina, Yu. V. Balakshin, K. A. Gonchar, I. V. Bozhev, A. A. Shemukhin, V. S. Chernysh

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引用次数: 0

摘要

摘要用能量为 250 keV、通量为 1013 至 1016 cm-2 的 Ar+ 离子辐照了硅纳米线。拉曼光谱研究了离子辐照下结构破坏与通量的关系。结果表明，与硅薄膜相比，多孔硅在每个原子位移值较高时发生非晶化。

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Amorphization of Silicon Nanowires upon Irradiation with Argon Ions

Abstract—The irradiation of silicon nanowires with Ar⁺ ions with the energy of 250 keV and fluences of 10¹³ to 10¹⁶ cm^–2 was carried out. The dependence of the destruction of the structure under ion irradiation on the fluence was investigated by Raman spectroscopy. It was shown that the amorphization of porous silicon occurs at higher values of displacement per atom than in thin silicon films.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.