GaS 薄膜的金属接触特性及光电探测器应用

IF 0.8 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY Journal of the Korean Physical Society Pub Date : 2024-08-22 DOI:10.1007/s40042-024-01157-w

Ju Won Kim, Dong Hyun Seo, Hagyoul Bae, Joo Hyung Park, TaeWan Kim

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引用次数: 0

摘要

III 族单质，尤其是硫化镓（GaS），因其宽带隙（可达约 3 eV）而在可见紫外范围的光电应用中备受关注。为了优化器件性能，我们需要了解 III 族单钙化物与金属电极之间的相互作用。在这项研究中，我们通过低温电流-电压测量，探讨了通过原子层沉积沉积的 GaS 与常用的 Ti/Au 电极之间的肖特基势垒高度。GaS 光电探测器表现出 p 型传输特性，迁移率为 7.71 × 10-1 cm2 V-1 s-1，光致发光率为 547 A W-1。

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Characteristics of metal contact to GaS films and photodetector applications

Group-III monochalcogenides, particularly gallium sulfide (GaS), have garnered attention for visible–UV range optoelectronic applications owing to their wide bandgap, which can reach approximately 3 eV. The interplay between group-III monochalcogenides and metal electrodes needs to be understood to optimize the device performance. In this study, we explored the Schottky barrier height between GaS deposited through atomic layer deposition and commonly employed Ti/Au electrodes through low-temperature current–voltage measurements. The GaS photodetector exhibited p-type transport characteristics with a mobility of 7.71 × 10^–1 cm² V⁻¹ s⁻¹ and a photoresponsivity of 547 A W⁻¹.

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来源期刊

Journal of the Korean Physical Society PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.20

自引率

16.70%

发文量

276

审稿时长

5.5 months

期刊介绍： The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.