{"title":"使用正硅酸四乙酯、六甲基二硅氧烷或六甲基二锗烷的低能 N+ 离子束诱导化学气相沉积技术","authors":"Satoru Yoshimura, Takae Takeuchi, Masato Kiuchi","doi":"10.1063/5.0214908","DOIUrl":null,"url":null,"abstract":"In this study, we conducted an experiment in which a source material was sprayed onto a substrate with simultaneous N+ ion beam injections. Hexamethyldisiloxane (HMDSO) or tetraethyl orthosilicate (TEOS) was used as a source material. The energy of N+ ions was set at 100 eV. The substrate temperature was set at room temperature. As a result of each trial, a film was deposited on the substrate in both HMDSO and TEOS cases. The film was analyzed by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. We found that the film was silicon dioxide and nitrogen atoms (2–4 at. %) were included in the film. For comparison, a trial was also conducted in which hexamethyldigermane (HMDG) was sprayed onto a substrate with simultaneous 30 eV N+ ion beam injections. Although HMDG had no oxygen atoms in its molecule, XPS and FTIR results showed that the film was germanium oxide containing nitrogen (2 at. %).","PeriodicalId":7619,"journal":{"name":"AIP Advances","volume":"9 1","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-energy N+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate, hexamethyldisiloxane, or hexamethyldigermane\",\"authors\":\"Satoru Yoshimura, Takae Takeuchi, Masato Kiuchi\",\"doi\":\"10.1063/5.0214908\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we conducted an experiment in which a source material was sprayed onto a substrate with simultaneous N+ ion beam injections. Hexamethyldisiloxane (HMDSO) or tetraethyl orthosilicate (TEOS) was used as a source material. The energy of N+ ions was set at 100 eV. The substrate temperature was set at room temperature. As a result of each trial, a film was deposited on the substrate in both HMDSO and TEOS cases. The film was analyzed by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. We found that the film was silicon dioxide and nitrogen atoms (2–4 at. %) were included in the film. For comparison, a trial was also conducted in which hexamethyldigermane (HMDG) was sprayed onto a substrate with simultaneous 30 eV N+ ion beam injections. Although HMDG had no oxygen atoms in its molecule, XPS and FTIR results showed that the film was germanium oxide containing nitrogen (2 at. %).\",\"PeriodicalId\":7619,\"journal\":{\"name\":\"AIP Advances\",\"volume\":\"9 1\",\"pages\":\"\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"AIP Advances\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0214908\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"AIP Advances","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0214908","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
在这项研究中,我们进行了一项实验,将源材料喷射到基底上,同时注入 N+ 离子束。我们使用六甲基二硅氧烷(HMDSO)或正硅酸四乙酯(TEOS)作为源材料。N+ 离子的能量设定为 100 eV。基底温度设定为室温。每次试验的结果都是在 HMDSO 和 TEOS 的基底上沉积出一层薄膜。通过 X 射线光电子能谱 (XPS) 和傅立叶变换红外光谱 (FTIR) 对薄膜进行了分析。我们发现薄膜是二氧化硅,其中含有氮原子(2-4%)。为了进行比较,我们还进行了一项试验,将六甲基二锗 (HMDG) 喷射到基底上,同时注入 30 eV N+ 离子束。虽然 HMDG 分子中没有氧原子,但 XPS 和傅立叶变换红外光谱结果表明,薄膜是含氮(2%)的氧化锗。
Low-energy N+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate, hexamethyldisiloxane, or hexamethyldigermane
In this study, we conducted an experiment in which a source material was sprayed onto a substrate with simultaneous N+ ion beam injections. Hexamethyldisiloxane (HMDSO) or tetraethyl orthosilicate (TEOS) was used as a source material. The energy of N+ ions was set at 100 eV. The substrate temperature was set at room temperature. As a result of each trial, a film was deposited on the substrate in both HMDSO and TEOS cases. The film was analyzed by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. We found that the film was silicon dioxide and nitrogen atoms (2–4 at. %) were included in the film. For comparison, a trial was also conducted in which hexamethyldigermane (HMDG) was sprayed onto a substrate with simultaneous 30 eV N+ ion beam injections. Although HMDG had no oxygen atoms in its molecule, XPS and FTIR results showed that the film was germanium oxide containing nitrogen (2 at. %).
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