高压合成的四方包晶 SrIrO3 中的假对称性

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-08-30 DOI:10.1021/acsaelm.4c01214
Haozhe Wang, Alberto de la Torre, Joseph T. Race, Qiaochu Wang, Jacob P. C. Ruff, Patrick M. Woodward, Kemp W. Plumb, David Walker, Weiwei Xie
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引用次数: 0

摘要

本研究以具有扭曲 6H 结构的常压单斜 SrIrO3 为前驱体,报道了在 6 GPa 和 1400 ℃ 下合成的 SrIrO3(P4/mmm,a = 3.9362(9) Å,c = 7.880(3) Å)的四方包晶结构。根据单晶和粉末 X 射线衍射评估了四方 SrIrO3 的晶体结构。观察到了立方分度,这归因于俯视超晶格反射。H 维和 K 维的弱分数峰表明结构可能受到氧缺陷的调节。磁化研究揭示了低至 2 K 的弱顺磁行为,表明自旋轨道耦合、电子关联和晶体电场之间存在相互作用。此外,电阻率测量结果表明,在大约 54 K 时,电阻率会出现上升,这是由于弱电子局域化和可能的结构缺陷造成的。
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Pseudosymmetry in Tetragonal Perovskite SrIrO3 Synthesized under High Pressure
In this study, we report a tetragonal perovskite structure of SrIrO3 (P4/mmm, a = 3.9362(9) Å, c = 7.880(3) Å) synthesized at 6 GPa and 1400 °C, employing the ambient pressure monoclinic SrIrO3 with distorted 6H structure as a precursor. The crystal structure of tetragonal SrIrO3 was evaluated on the basis of single-crystal and powder X-ray diffraction. A cubic indexing was observed, which was attributed to overlooked superlattice reflections. Weak fractional peaks in the H and K dimensions suggest possible structure modulation by oxygen defects. Magnetization study reveals weak paramagnetic behavior down to 2 K, indicative of the interplay between spin–orbit coupling, electron correlations, and the crystal electric field. Additionally, measurements of electrical resistivity display metallic behavior with an upturn at about 54 K, which is ascribed to weak electron localization and possible structural defects.
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CiteScore
7.20
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4.30%
发文量
567
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