{"title":"用于高速 SRAM 的电源升压型电压检测放大器 (SBVSA) 快达 45","authors":"Rachit Sharma;Anuj Grover;Ajay Shroti;Shouri Chatterjee","doi":"10.1109/TCSII.2024.3443594","DOIUrl":null,"url":null,"abstract":"The performance of Sense Amplifiers (SAs) is critical to high-speed SRAMs. Large-offset and slow-resolving SAs can create a bottleneck in the SRAM performance at low voltages because of which a lot of emphasis is laid on designing faster SAs, often at the cost of area. In this brief, we propose a variation-tolerant Supply Boosted Voltage Sense Amplifier (SBVSA) that is up to 45% faster at \n<inline-formula> <tex-math>$5\\sigma $ </tex-math></inline-formula>\n than a Conventional Voltage Sense Amplifier (CVSA) in 22nm CMOS technology. This gain is achieved with an area overhead of less than 1% in SRAM instances while improving the read performance of the instances by up to 9% in 22nm CMOS.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"71 11","pages":"4683-4687"},"PeriodicalIF":4.0000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Up to 45% Faster Supply Boosted Voltage Sense Amplifier (SBVSA) for High-Speed SRAMs\",\"authors\":\"Rachit Sharma;Anuj Grover;Ajay Shroti;Shouri Chatterjee\",\"doi\":\"10.1109/TCSII.2024.3443594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of Sense Amplifiers (SAs) is critical to high-speed SRAMs. Large-offset and slow-resolving SAs can create a bottleneck in the SRAM performance at low voltages because of which a lot of emphasis is laid on designing faster SAs, often at the cost of area. In this brief, we propose a variation-tolerant Supply Boosted Voltage Sense Amplifier (SBVSA) that is up to 45% faster at \\n<inline-formula> <tex-math>$5\\\\sigma $ </tex-math></inline-formula>\\n than a Conventional Voltage Sense Amplifier (CVSA) in 22nm CMOS technology. This gain is achieved with an area overhead of less than 1% in SRAM instances while improving the read performance of the instances by up to 9% in 22nm CMOS.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"71 11\",\"pages\":\"4683-4687\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10636781/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10636781/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Up to 45% Faster Supply Boosted Voltage Sense Amplifier (SBVSA) for High-Speed SRAMs
The performance of Sense Amplifiers (SAs) is critical to high-speed SRAMs. Large-offset and slow-resolving SAs can create a bottleneck in the SRAM performance at low voltages because of which a lot of emphasis is laid on designing faster SAs, often at the cost of area. In this brief, we propose a variation-tolerant Supply Boosted Voltage Sense Amplifier (SBVSA) that is up to 45% faster at
$5\sigma $
than a Conventional Voltage Sense Amplifier (CVSA) in 22nm CMOS technology. This gain is achieved with an area overhead of less than 1% in SRAM instances while improving the read performance of the instances by up to 9% in 22nm CMOS.
期刊介绍:
TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes:
Circuits: Analog, Digital and Mixed Signal Circuits and Systems
Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic
Circuits and Systems, Power Electronics and Systems
Software for Analog-and-Logic Circuits and Systems
Control aspects of Circuits and Systems.