{"title":"带校准电路的双数据率纹波计数器,用于 CMOS 图像传感器中的相关多重采样","authors":"Wanbin Zha;Jiangtao Xu;Kaiming Nie;Zhiyuan Gao","doi":"10.1109/TVLSI.2024.3449320","DOIUrl":null,"url":null,"abstract":"This brief presents a double-data-rate (DDR) ripple counter with calibration circuits for correlated multiple sampling (CMS) in CMOS image sensors (CISs). This brief analyzes a specific type of least significant bit (LSB) error that obstructs the recording of the prior LSB count result during continuous counting processes when performing digital correlated double sampling (DDS) and digital CMS. This error stems from the transparent characteristic of the LSB in DDR counter and causes the increase of random noise. A calibration circuit is presented to calibrate the LSB error, which achieves carry propagation and retains the remainder by recording the result of the LSB after each quantization. The random noise is reduced by 25.5% based on simulation results in different CMS iterations after calibration. A <inline-formula> <tex-math>$1280\\times 1024$ </tex-math></inline-formula> prototype CIS is fabricated in a 110-nm 1P4M process. The experimental results show that at DDS mode, the CIS random noise is <inline-formula> <tex-math>$147~\\mu \\text { V}_{\\text {rms}}$ </tex-math></inline-formula> and ADC power consumption is <inline-formula> <tex-math>$21.07~\\mu $ </tex-math></inline-formula> W, whereas at CMS =2, the noise is <inline-formula> <tex-math>$118~\\mu \\text { V}_{\\text {rms}}$ </tex-math></inline-formula> and power consumption is <inline-formula> <tex-math>$28.07~\\mu $ </tex-math></inline-formula> W. In addition, the prototype CIS has a column FPN of 0.006%.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 2","pages":"568-572"},"PeriodicalIF":2.8000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Double-Data-Rate Ripple Counter With Calibration Circuits for Correlated Multiple Sampling in CMOS Image Sensors\",\"authors\":\"Wanbin Zha;Jiangtao Xu;Kaiming Nie;Zhiyuan Gao\",\"doi\":\"10.1109/TVLSI.2024.3449320\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief presents a double-data-rate (DDR) ripple counter with calibration circuits for correlated multiple sampling (CMS) in CMOS image sensors (CISs). This brief analyzes a specific type of least significant bit (LSB) error that obstructs the recording of the prior LSB count result during continuous counting processes when performing digital correlated double sampling (DDS) and digital CMS. This error stems from the transparent characteristic of the LSB in DDR counter and causes the increase of random noise. A calibration circuit is presented to calibrate the LSB error, which achieves carry propagation and retains the remainder by recording the result of the LSB after each quantization. The random noise is reduced by 25.5% based on simulation results in different CMS iterations after calibration. A <inline-formula> <tex-math>$1280\\\\times 1024$ </tex-math></inline-formula> prototype CIS is fabricated in a 110-nm 1P4M process. The experimental results show that at DDS mode, the CIS random noise is <inline-formula> <tex-math>$147~\\\\mu \\\\text { V}_{\\\\text {rms}}$ </tex-math></inline-formula> and ADC power consumption is <inline-formula> <tex-math>$21.07~\\\\mu $ </tex-math></inline-formula> W, whereas at CMS =2, the noise is <inline-formula> <tex-math>$118~\\\\mu \\\\text { V}_{\\\\text {rms}}$ </tex-math></inline-formula> and power consumption is <inline-formula> <tex-math>$28.07~\\\\mu $ </tex-math></inline-formula> W. In addition, the prototype CIS has a column FPN of 0.006%.\",\"PeriodicalId\":13425,\"journal\":{\"name\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"volume\":\"33 2\",\"pages\":\"568-572\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10664642/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10664642/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A Double-Data-Rate Ripple Counter With Calibration Circuits for Correlated Multiple Sampling in CMOS Image Sensors
This brief presents a double-data-rate (DDR) ripple counter with calibration circuits for correlated multiple sampling (CMS) in CMOS image sensors (CISs). This brief analyzes a specific type of least significant bit (LSB) error that obstructs the recording of the prior LSB count result during continuous counting processes when performing digital correlated double sampling (DDS) and digital CMS. This error stems from the transparent characteristic of the LSB in DDR counter and causes the increase of random noise. A calibration circuit is presented to calibrate the LSB error, which achieves carry propagation and retains the remainder by recording the result of the LSB after each quantization. The random noise is reduced by 25.5% based on simulation results in different CMS iterations after calibration. A $1280\times 1024$ prototype CIS is fabricated in a 110-nm 1P4M process. The experimental results show that at DDS mode, the CIS random noise is $147~\mu \text { V}_{\text {rms}}$ and ADC power consumption is $21.07~\mu $ W, whereas at CMS =2, the noise is $118~\mu \text { V}_{\text {rms}}$ and power consumption is $28.07~\mu $ W. In addition, the prototype CIS has a column FPN of 0.006%.
期刊介绍:
The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society.
Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels.
To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.