Pub Date : 2025-01-22DOI: 10.1109/TVLSI.2025.3527804
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Pub Date : 2025-01-22DOI: 10.1109/TVLSI.2024.3523620
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Pub Date : 2024-12-30DOI: 10.1109/TVLSI.2024.3517117
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Pub Date : 2024-12-30DOI: 10.1109/TVLSI.2024.3517115
{"title":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems Publication Information","authors":"","doi":"10.1109/TVLSI.2024.3517115","DOIUrl":"https://doi.org/10.1109/TVLSI.2024.3517115","url":null,"abstract":"","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 1","pages":"C2-C2"},"PeriodicalIF":2.8,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10818572","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/TVLSI.2024.3493512
Jari Nurmi;Snorre Aunet;Alireza Saberkari
{"title":"Guest Editorial Selected Papers From IEEE Nordic Circuits and Systems Conference (NorCAS) 2023","authors":"Jari Nurmi;Snorre Aunet;Alireza Saberkari","doi":"10.1109/TVLSI.2024.3493512","DOIUrl":"https://doi.org/10.1109/TVLSI.2024.3493512","url":null,"abstract":"","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"32 12","pages":"2169-2172"},"PeriodicalIF":2.8,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10791332","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142821186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/TVLSI.2024.3508673
Zhichao Chen;Ali H. Hassan;Rhesa Ramadhan;Yingheng Li;Chih-Kong Ken Yang;Sudhakar Pamarti;Puneet Gupta
Low-temperature (LT) conditions can potentially lead to lower power consumption and enhanced performance in circuit operations by reducing the transistor leakage current, increasing carrier mobility, reducing wear-out, and reducing interconnect resistance. We develop PROCEED-LT, a pathfinding framework to co-optimize devices and circuits over a wide performance range. Our results demonstrate that circuit operations at LT (−196 °C) reduce power compared to room temperature (RT, 85 °C) by $15times $