ZnSe/CdSe/ZnSe 量子阱中拉扎维与波氏-泰勒约束电势对光电特性的影响比较

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-09-02 DOI:10.1007/s11082-024-07359-7
M. Kavitha, A. Naifar, A. John Peter, V. Raja
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引用次数: 0

摘要

利用拉扎维(Razavy)和波希尔-泰勒(Pöschl-Teller)约束势研究了 ZnSe/CdSe/ZnSe 量子阱中激子的电子和光学特性。关于激子结合能、振荡器强度、辐射寿命、吸收系数和折射率变化的理论研究主要集中在这两种势的结构参数上。研究采用了变分法和矩阵密度法。在拉扎维电势的两个结构参数(A 和 M)中,M 比 A 更有效,同样,在波氏-泰勒电势中,λ 参数比另一个参数 χ 更有效。当 A 值小于 M 值时,单量子阱变为双量子阱。此外,光学特性会受到几何尺寸、结构变化和相关结构参数的强烈影响。这导致量子阱的光学特性发生巨大变化。我们将研究结果与现有文献进行了比较,并希望这些结果能用于未来光电子器件的电位设计。
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Comparison of Razavy and Pöschl -Teller confined potentials on the opto-electronic properties in a ZnSe/CdSe/ZnSe quantum well

Electronic and optical properties of an exciton in the ZnSe/CdSe/ZnSe quantum well are investigated using the Razavy and Pöschl -Teller confined potentials. The theoretical investigations on exciton binding energy, oscillator strength, radiative lifetime, absorption coefficient and changes of refractive index are focused on the structural parameters of these two potentials. They are carried out using variational method and the matrix density approach. Out of two structural parameters (A and M) in the Razavy potential, M is found to be much more effective than A, similarly, λ parameter is more effective than the other parameter χ in Pöschl-Teller potential. The single quantum well becomes double quantum well when the value of A is less than the value of M. The potential asymmetry is developed if the structural parameters are altered. Further, the optical properties are strongly affected by the geometrical size, changes in the structure and the associated structural parameters. It leads to alter the optical properties drastically in the quantum well. The results are compared with the available literature and we hope that they can be used for the design of potentials for the future opto-electronic devices.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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