Irving K. Cashwell, Donovan A. Thomas, Jonathan R. Skuza, Aswini K. Pradhan
{"title":"与 HfO2/GaAs 半导体相比,InGaAs 上原子层沉积 HfO2 薄膜的电子特性","authors":"Irving K. Cashwell, Donovan A. Thomas, Jonathan R. Skuza, Aswini K. Pradhan","doi":"10.3390/cryst14090753","DOIUrl":null,"url":null,"abstract":"This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO2/InGaAs-based MOS capacitor, in which growth temperatures and surface treatments of the substrate are two key factors that contribute to the uniformity and composition of the HfO2 thin films. A remarkable asymmetry observed in capacitance versus voltage measurements was linked to the interface defects and charge redistribution, as confirmed from X-ray photoelectron spectroscopy. The GaAs substrates that were etched with only NH4OH showed a large frequency dispersion and a higher surface roughness; however, the HfO2 thin films grown on GaAs pre-treated with both NH4OH etching and (NH4)2S passivation steps produced a desirable surface and superior electronic properties.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"12 1","pages":""},"PeriodicalIF":2.4000,"publicationDate":"2024-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors\",\"authors\":\"Irving K. Cashwell, Donovan A. Thomas, Jonathan R. Skuza, Aswini K. Pradhan\",\"doi\":\"10.3390/cryst14090753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO2/InGaAs-based MOS capacitor, in which growth temperatures and surface treatments of the substrate are two key factors that contribute to the uniformity and composition of the HfO2 thin films. A remarkable asymmetry observed in capacitance versus voltage measurements was linked to the interface defects and charge redistribution, as confirmed from X-ray photoelectron spectroscopy. The GaAs substrates that were etched with only NH4OH showed a large frequency dispersion and a higher surface roughness; however, the HfO2 thin films grown on GaAs pre-treated with both NH4OH etching and (NH4)2S passivation steps produced a desirable surface and superior electronic properties.\",\"PeriodicalId\":10855,\"journal\":{\"name\":\"Crystals\",\"volume\":\"12 1\",\"pages\":\"\"},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2024-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystals\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.3390/cryst14090753\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystals","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3390/cryst14090753","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
摘要
本文展示了 III-V 族半导体表面处理如何影响缺陷数量并确保高 K 介电薄膜的保形生长。我们介绍了基于 HfO2/InGaAs 的 MOS 电容器的电气特性,其中基底的生长温度和表面处理是影响 HfO2 薄膜均匀性和组成的两个关键因素。X 射线光电子能谱证实,在电容与电压测量中观察到的明显不对称性与界面缺陷和电荷再分布有关。仅用 NH4OH 蚀刻的砷化镓基底显示出较大的频率离散性和较高的表面粗糙度;然而,在砷化镓上生长的 HfO2 薄膜经过 NH4OH 蚀刻和 (NH4)2S 钝化步骤的预处理,产生了理想的表面和优异的电子特性。
Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors
This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO2/InGaAs-based MOS capacitor, in which growth temperatures and surface treatments of the substrate are two key factors that contribute to the uniformity and composition of the HfO2 thin films. A remarkable asymmetry observed in capacitance versus voltage measurements was linked to the interface defects and charge redistribution, as confirmed from X-ray photoelectron spectroscopy. The GaAs substrates that were etched with only NH4OH showed a large frequency dispersion and a higher surface roughness; however, the HfO2 thin films grown on GaAs pre-treated with both NH4OH etching and (NH4)2S passivation steps produced a desirable surface and superior electronic properties.
期刊介绍:
Crystals (ISSN 2073-4352) is an open access journal that covers all aspects of crystalline material research. Crystals can act as a reference, and as a publication resource, to the community. It publishes reviews, regular research articles, and short communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. Therefore, there is no restriction on article length. Full experimental details must be provided to enable the results to be reproduced. Crystals provides a forum for the advancement of our understanding of the nucleation, growth, processing, and characterization of crystalline materials. Their mechanical, chemical, electronic, magnetic, and optical properties, and their diverse applications, are all considered to be of importance.