{"title":"通过对锡氧簇 EBL 光刻胶中 Sn-C 键自由基的反馈调节平衡灵敏度和分辨率","authors":"Hao Chen \n (, ), Xinyan Huang \n (, ), Yingdong Zhao \n (, ), Jun Zhao \n (, ), Pengzhong Chen \n (, ), Xiaojun Peng \n (, )","doi":"10.1007/s40843-024-3062-y","DOIUrl":null,"url":null,"abstract":"<div><p>Notably, the cleavage of Sn–C bonds in extreme-ultraviolet photoresists containing Sn-oxygen (oxo) clusters and the generation of free radicals upon exposure lead to the chemical linking of Sn-oxo cores and subsequent solubility shifts. The reactivities and migration patterns of the generated radicals substantially influence patterning outcomes, including sensitivity and resolution. Herein, two Snoxo clusters, Sn<sub>4</sub>-Me-C<sub>10</sub> (with Sn–methyl) and Sn<sub>4</sub>-Bu-C<sub>10</sub> (with Sn–butyl), were combined to balance the sensitivity and resolution of photoresists, leveraging the feedback regulation between methyl and butyl free radicals generated from Sn–C bond cleavage. During electron beam lithography exposure, sensitive butyl radicals produced by Sn<sub>4</sub>-Bu-C<sub>10</sub> initiated reactions within Sn<sub>4</sub>-Me-C<sub>10</sub>, improving sensitivity. Subsequently, the unstable methyl and bulky adamantyl radicals generated by Sn<sub>4</sub>-Me-C<sub>10</sub> quenched the excess butyl radicals, thus improving the resolution and exposure latitude. Thus, this method leveraging the feedback regulation of free radicals offers new insights into the design of sensitive metal oxide resists with enhanced resolution.\n</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":773,"journal":{"name":"Science China Materials","volume":"67 10","pages":"3142 - 3150"},"PeriodicalIF":6.8000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Balancing sensitivity and resolution by feedback regulation of free radicals from Sn-C bonds in tin-oxygen clusters EBL photoresist\",\"authors\":\"Hao Chen \\n (, ), Xinyan Huang \\n (, ), Yingdong Zhao \\n (, ), Jun Zhao \\n (, ), Pengzhong Chen \\n (, ), Xiaojun Peng \\n (, )\",\"doi\":\"10.1007/s40843-024-3062-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Notably, the cleavage of Sn–C bonds in extreme-ultraviolet photoresists containing Sn-oxygen (oxo) clusters and the generation of free radicals upon exposure lead to the chemical linking of Sn-oxo cores and subsequent solubility shifts. The reactivities and migration patterns of the generated radicals substantially influence patterning outcomes, including sensitivity and resolution. Herein, two Snoxo clusters, Sn<sub>4</sub>-Me-C<sub>10</sub> (with Sn–methyl) and Sn<sub>4</sub>-Bu-C<sub>10</sub> (with Sn–butyl), were combined to balance the sensitivity and resolution of photoresists, leveraging the feedback regulation between methyl and butyl free radicals generated from Sn–C bond cleavage. During electron beam lithography exposure, sensitive butyl radicals produced by Sn<sub>4</sub>-Bu-C<sub>10</sub> initiated reactions within Sn<sub>4</sub>-Me-C<sub>10</sub>, improving sensitivity. Subsequently, the unstable methyl and bulky adamantyl radicals generated by Sn<sub>4</sub>-Me-C<sub>10</sub> quenched the excess butyl radicals, thus improving the resolution and exposure latitude. Thus, this method leveraging the feedback regulation of free radicals offers new insights into the design of sensitive metal oxide resists with enhanced resolution.\\n</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":773,\"journal\":{\"name\":\"Science China Materials\",\"volume\":\"67 10\",\"pages\":\"3142 - 3150\"},\"PeriodicalIF\":6.8000,\"publicationDate\":\"2024-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science China Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40843-024-3062-y\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40843-024-3062-y","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Balancing sensitivity and resolution by feedback regulation of free radicals from Sn-C bonds in tin-oxygen clusters EBL photoresist
Notably, the cleavage of Sn–C bonds in extreme-ultraviolet photoresists containing Sn-oxygen (oxo) clusters and the generation of free radicals upon exposure lead to the chemical linking of Sn-oxo cores and subsequent solubility shifts. The reactivities and migration patterns of the generated radicals substantially influence patterning outcomes, including sensitivity and resolution. Herein, two Snoxo clusters, Sn4-Me-C10 (with Sn–methyl) and Sn4-Bu-C10 (with Sn–butyl), were combined to balance the sensitivity and resolution of photoresists, leveraging the feedback regulation between methyl and butyl free radicals generated from Sn–C bond cleavage. During electron beam lithography exposure, sensitive butyl radicals produced by Sn4-Bu-C10 initiated reactions within Sn4-Me-C10, improving sensitivity. Subsequently, the unstable methyl and bulky adamantyl radicals generated by Sn4-Me-C10 quenched the excess butyl radicals, thus improving the resolution and exposure latitude. Thus, this method leveraging the feedback regulation of free radicals offers new insights into the design of sensitive metal oxide resists with enhanced resolution.
期刊介绍：
Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.
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