用掺钨二氧化锡作为电子传输材料提高 Perovskite 太阳能电池的性能

IF 3.9 3区 化学 Q2 POLYMER SCIENCE Journal of Inorganic and Organometallic Polymers and Materials Pub Date : 2024-09-06 DOI:10.1007/s10904-024-03365-0
Muhammad Zakir Muzakkar, Nur Aisyah Busri, Akrajas Ali Umar, La Ode Agus Salim, Maulidiyah Maulidiyah, Muhammad Nurdin
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引用次数: 0

摘要

本研究的重点是掺杂钨(W)的二氧化锰(SnO2)作为过氧化物太阳能电池(PSC)的电子传输材料(ETM)的合成和表征。目的是通过改善 ETM 的性能来提高 PSC 的性能。掺杂 W 的二氧化锡是通过将二氧化锡和 W 溶解在去离子水中,然后超声合成的。掺杂是通过旋涂技术实现的,随后在 350 °C 下退火 20 分钟。X 射线衍射分析显示,二氧化锡在 2θ 值为 26.53°、33.82°、37.67°、51.59° 和 54.69°时出现了特征峰,在 2θ = 14.46°时还出现了一个附加峰,表明成功掺入了钨。场发射扫描电子显微镜证实,在掺氟氧化锡玻璃上形成了厚度约为 44.66 纳米的均匀电子传输层。紫外可见光谱测量表明,掺杂钨的二氧化锡的带隙为 4.38 eV。性能评估显示,掺 W 的 SnO2 ETL 在 PSC 应用中的性能优于未掺 W 的 SnO2 ETL,这体现在开路电压 (Voc)、填充因子 (FF)、短路电流密度 (Jsc) 和功率转换效率的显著提高上。在二氧化锡 ETL 中掺入 W 能显著提高器件的整体效率,而滞后曲线则证明了 J-V 损耗的降低。优化后的掺 W SnO2 ETL 型 PSC 功率转换效率高达 8.02%,Voc、Jsc 和 FF 分别达到 0.89 V、23.65 mA/cm2 和 0.45。这项研究凸显了掺杂 W 的 SnO2 作为一种有前途的 ETM 在提高 PSC 效率方面的巨大潜力。
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Enhanced Performance of Perovskite Solar Cells with Tungsten-Doped SnO2 as an Electron Transport Material

This study focuses on the synthesis and characterization of tungsten (W)-doped SnO2 as an electron transport material (ETM) for perovskite solar cells (PSC). The aim is to enhance the performance of PSCs by improving the properties of the ETM. The W-doped SnO2 was synthesized by dissolving SnO2 and W in deionized water, followed by sonication. The doping was achieved using a spin-coating technique, with subsequent annealing at 350 °C for 20 min. X-ray diffraction analysis revealed characteristic peaks of SnO2 at 2θ values of 26.53°, 33.82°, 37.67°, 51.59°, and 54.69°, alongside an additional peak at 2θ = 14.46°, indicative of successful tungsten incorporation. Field emission scanning electron microscopy confirmed the formation of a uniform electron transport layer on fluorine-doped tin oxide glass, with a thickness of approximately 44.66 nm. UV–Vis spectroscopy measurements showed that the band gap of W-doped SnO2 was 4.38 eV. Performance evaluation revealed that the W-doped SnO2 ETL outperformed the undoped SnO2 ETL in PSC applications, as evidenced by significant improvements in open-circuit voltage (Voc), fill factor (FF), short-circuit current density (Jsc), and power conversion efficiency. Incorporating W into the SnO2 ETL led to a marked increase in overall device efficiency, corroborated by a hysteresis curve demonstrating reduced J–V loss. The optimized W-doped SnO2 ETL-based PSC achieved a notable power conversion efficiency of up to 8.02%, with Voc, Jsc, and FF reaching 0.89 V, 23.65 mA/cm2, and 0.45, respectively. This study highlights the significant potential of W-doped SnO2 as a promising ETM for enhancing the efficiency of PSCs.

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来源期刊
CiteScore
8.30
自引率
7.50%
发文量
335
审稿时长
1.8 months
期刊介绍: Journal of Inorganic and Organometallic Polymers and Materials [JIOP or JIOPM] is a comprehensive resource for reports on the latest theoretical and experimental research. This bimonthly journal encompasses a broad range of synthetic and natural substances which contain main group, transition, and inner transition elements. The publication includes fully peer-reviewed original papers and shorter communications, as well as topical review papers that address the synthesis, characterization, evaluation, and phenomena of inorganic and organometallic polymers, materials, and supramolecular systems.
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