{"title":"新型低损耗 0.65-THz 多剖面折叠波导高频电路","authors":"Jingyu Guo;Yang Dong;Yuan Zheng;Duo Xu;Jingrui Duan;Yuxin Wang;Ping Zhang;Zhanliang Wang;Zhigang Lu;Shaomeng Wang;Yubin Gong","doi":"10.1109/TED.2024.3452703","DOIUrl":null,"url":null,"abstract":"A low-loss and high-effective-output-power terahertz (THz) folded waveguide (FWG) high-frequency circuit is proposed, fabricated, and tested. The circuit consists of several slow wave sections connected by a single period transition structure, in which the odd number sections are with the same slow wave unit cells and the even ones are with another same slow wave unit cells. To increase fabrication accuracy and reduce the circuit losses, both slow wave unit cells are designed to operate with phase shifts greater than 600°. The circuit, fabricated from oxygen-free copper (OFC) by using nano computer numerical control (nano-CNC) milling technology, exhibits excellent transmission characteristics in the cold test experiment, achieving a transmission loss of less than 1 dB/mm, corresponding a recorded equivalent conductivity of \n<inline-formula> <tex-math>$3.7\\times 10^{{7}}$ </tex-math></inline-formula>\n S/m above 0.6 THz. The simulations with modified structural dimensions based on the fabricated sample indicate that the machining errors are below \n<inline-formula> <tex-math>$2\\mu $ </tex-math></inline-formula>\nm, resulting in the frequency shift within 12 GHz. In addition, the low loss enables the saturated input power to be as low as 0.5 mW, while the maximum output power reaches 2.86 W with a 3-dB bandwidth of approximately 8 GHz.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit\",\"authors\":\"Jingyu Guo;Yang Dong;Yuan Zheng;Duo Xu;Jingrui Duan;Yuxin Wang;Ping Zhang;Zhanliang Wang;Zhigang Lu;Shaomeng Wang;Yubin Gong\",\"doi\":\"10.1109/TED.2024.3452703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-loss and high-effective-output-power terahertz (THz) folded waveguide (FWG) high-frequency circuit is proposed, fabricated, and tested. The circuit consists of several slow wave sections connected by a single period transition structure, in which the odd number sections are with the same slow wave unit cells and the even ones are with another same slow wave unit cells. To increase fabrication accuracy and reduce the circuit losses, both slow wave unit cells are designed to operate with phase shifts greater than 600°. The circuit, fabricated from oxygen-free copper (OFC) by using nano computer numerical control (nano-CNC) milling technology, exhibits excellent transmission characteristics in the cold test experiment, achieving a transmission loss of less than 1 dB/mm, corresponding a recorded equivalent conductivity of \\n<inline-formula> <tex-math>$3.7\\\\times 10^{{7}}$ </tex-math></inline-formula>\\n S/m above 0.6 THz. The simulations with modified structural dimensions based on the fabricated sample indicate that the machining errors are below \\n<inline-formula> <tex-math>$2\\\\mu $ </tex-math></inline-formula>\\nm, resulting in the frequency shift within 12 GHz. In addition, the low loss enables the saturated input power to be as low as 0.5 mW, while the maximum output power reaches 2.86 W with a 3-dB bandwidth of approximately 8 GHz.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10670312/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10670312/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A low-loss and high-effective-output-power terahertz (THz) folded waveguide (FWG) high-frequency circuit is proposed, fabricated, and tested. The circuit consists of several slow wave sections connected by a single period transition structure, in which the odd number sections are with the same slow wave unit cells and the even ones are with another same slow wave unit cells. To increase fabrication accuracy and reduce the circuit losses, both slow wave unit cells are designed to operate with phase shifts greater than 600°. The circuit, fabricated from oxygen-free copper (OFC) by using nano computer numerical control (nano-CNC) milling technology, exhibits excellent transmission characteristics in the cold test experiment, achieving a transmission loss of less than 1 dB/mm, corresponding a recorded equivalent conductivity of
$3.7\times 10^{{7}}$
S/m above 0.6 THz. The simulations with modified structural dimensions based on the fabricated sample indicate that the machining errors are below
$2\mu $
m, resulting in the frequency shift within 12 GHz. In addition, the low loss enables the saturated input power to be as low as 0.5 mW, while the maximum output power reaches 2.86 W with a 3-dB bandwidth of approximately 8 GHz.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.