{"title":"通过光子捕获孔阵列实现响应增强型 GeSn 光电探测器","authors":"Guoyin Xu;Hui Cong;Rui Pan;Xiaoyu Wang;Lin Shen;Yue Li;Yixin Wang;Hong Lu;Chi Xu;Chunlai Xue","doi":"10.1109/TED.2024.3450434","DOIUrl":null,"url":null,"abstract":"Silicon-based GeSn short wave infrared (SWIR) photodetectors (PDs) were designed and fabricated, whose optical response at 2000 nm was enhanced by a carefully designed hole array photon-trapping structure. The photon-trapping structure can change the light propagation direction from being perpendicular to the PD surface to lateral directions, and the absorption efficiency is improved by optical resonance enhancement effect. The responsivity of the GeSn PD with holes array on the surface was measured to be 79.0 mA/W, which has achieved a 2.3 times enhancement at a wavelength of 2000 nm. The high-performance GeSn PDs with photon-trapping structure have offered an alternative solution for high-efficiency silicon-based SWIR detection, manifesting great potential as candidates for extended optical communication and monolithic infrared imaging focal-plane array (FPA).","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array\",\"authors\":\"Guoyin Xu;Hui Cong;Rui Pan;Xiaoyu Wang;Lin Shen;Yue Li;Yixin Wang;Hong Lu;Chi Xu;Chunlai Xue\",\"doi\":\"10.1109/TED.2024.3450434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon-based GeSn short wave infrared (SWIR) photodetectors (PDs) were designed and fabricated, whose optical response at 2000 nm was enhanced by a carefully designed hole array photon-trapping structure. The photon-trapping structure can change the light propagation direction from being perpendicular to the PD surface to lateral directions, and the absorption efficiency is improved by optical resonance enhancement effect. The responsivity of the GeSn PD with holes array on the surface was measured to be 79.0 mA/W, which has achieved a 2.3 times enhancement at a wavelength of 2000 nm. The high-performance GeSn PDs with photon-trapping structure have offered an alternative solution for high-efficiency silicon-based SWIR detection, manifesting great potential as candidates for extended optical communication and monolithic infrared imaging focal-plane array (FPA).\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10663984/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10663984/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array
Silicon-based GeSn short wave infrared (SWIR) photodetectors (PDs) were designed and fabricated, whose optical response at 2000 nm was enhanced by a carefully designed hole array photon-trapping structure. The photon-trapping structure can change the light propagation direction from being perpendicular to the PD surface to lateral directions, and the absorption efficiency is improved by optical resonance enhancement effect. The responsivity of the GeSn PD with holes array on the surface was measured to be 79.0 mA/W, which has achieved a 2.3 times enhancement at a wavelength of 2000 nm. The high-performance GeSn PDs with photon-trapping structure have offered an alternative solution for high-efficiency silicon-based SWIR detection, manifesting great potential as candidates for extended optical communication and monolithic infrared imaging focal-plane array (FPA).
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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