通过显微镜高光谱成像建立具有热耦合矩阵的多芯片发光二极管器件的二维光热模型

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-09-04 DOI:10.1109/TED.2024.3450441
Guanhong Liu;Huanting Chen;Yin Zheng;Huichuan Lin;Shuo Lin;Yuxin Wu;Xuehua Shen
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引用次数: 0

摘要

本文提出了一种确定多芯片发光二极管(LED)器件二维峰值波长分布的方法,将其光谱特性与结温联系起来,并同时考虑热耦合因素。该方法提出,多芯片发光二极管器件二维光热分布的理论热耦合矩阵可用于计算每个芯片在给定热功率下的温度分布。使用基于热耦合矩阵(考虑了整个二维空间的峰值波长分布)的建议方法,对每个芯片组合的热均匀性和光谱均匀性进行了优化和评估。通过红外热成像和显微高光谱成像技术,在三个芯片模块上对建模技术进行了实验验证。实验结果表明,与线性方法相比,所提出的方法实现了更紧凑的特征集,同时在温度和峰值波长分布方面具有很高的精度。实验结果清楚地表明,利用所提出的模型预测红、绿、蓝 LED 的峰值波长分布的准确度提高幅度最大,平均准确度分别提高了 67.1%、40.2% 和 22.4%。
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Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging
This article presents a method for determining the 2-D peak wavelength distribution of multichip light-emitting diodes (LEDs) devices by relating their spectral properties to junction temperature and by considering thermal coupling factors as well. It is proposed that a theoretical thermal coupling matrix for 2-D photothermal distributions of multichip LED devices can be used to calculate the temperature distribution at a given heat power of each chip. Each chip combination was optimized and evaluated for thermal and spectral uniformity using the proposed method based on a thermal coupling matrix that considers the peak wavelength distribution in the entire 2-D space. The modeling technique was validated experimentally on three-chip modules by infrared thermography and microscopic hyperspectral imaging technique. The experimental results approve that the proposed approach in comparison to a linear method has achieved a more compact set of features along with high accuracy for temperature and peak wavelength distribution. The results clearly show that the prediction of peak wavelength distribution for red, green, and blue LEDs with the proposed model has the largest increase in accuracy, with an average accuracy increase of 67.1%, 40.2%, and 22.4%, respectively.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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