{"title":"在散射测量中使用空间光调制器从衍射图像中提取特征","authors":"Jinyang Li;Hung-Fei Kuo","doi":"10.1109/TSM.2024.3448458","DOIUrl":null,"url":null,"abstract":"The continuous miniaturization of semiconductor devices has increased the demand for advanced process control technologies. This process requires real-time measurement systems to monitor manufacturing parameters to ensure efficiency and high quality. This study introduces a novel optical module that uses a spatial light modulator to extract key-point intensity distributions from diffraction images in scatterometry. The efficacy of this method is demonstrated on a grating target with a pitch of 855 nm using a feature extraction algorithm that identifies key point locations based on calculated diffraction images. A particularly designed off-axis extraction pattern facilitates the acquisition of key-point intensity distributions. Moreover, incorporating a cylindrical lens into the optical setup reduces the image feature dimensionality, thereby decreasing the data storage space and enabling the output in a streamlined vector format conducive to further analysis. Experimental data on the development of this scatterometry-based optical module and the subsequent validation of the key-point extraction method indicate a maximum mean absolute error of 0.0080 and a cosine similarity consistently above 0.9999. This study integrates image analysis and measurement techniques by optics, providing a more efficient pathway for key-point extraction in diffraction images, offering the potential for improving real-time process monitoring in the semiconductor manufacturing industry.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"37 4","pages":"518-526"},"PeriodicalIF":2.3000,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Feature Extraction From Diffraction Images Using a Spatial Light Modulator in Scatterometry\",\"authors\":\"Jinyang Li;Hung-Fei Kuo\",\"doi\":\"10.1109/TSM.2024.3448458\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The continuous miniaturization of semiconductor devices has increased the demand for advanced process control technologies. This process requires real-time measurement systems to monitor manufacturing parameters to ensure efficiency and high quality. This study introduces a novel optical module that uses a spatial light modulator to extract key-point intensity distributions from diffraction images in scatterometry. The efficacy of this method is demonstrated on a grating target with a pitch of 855 nm using a feature extraction algorithm that identifies key point locations based on calculated diffraction images. A particularly designed off-axis extraction pattern facilitates the acquisition of key-point intensity distributions. Moreover, incorporating a cylindrical lens into the optical setup reduces the image feature dimensionality, thereby decreasing the data storage space and enabling the output in a streamlined vector format conducive to further analysis. Experimental data on the development of this scatterometry-based optical module and the subsequent validation of the key-point extraction method indicate a maximum mean absolute error of 0.0080 and a cosine similarity consistently above 0.9999. This study integrates image analysis and measurement techniques by optics, providing a more efficient pathway for key-point extraction in diffraction images, offering the potential for improving real-time process monitoring in the semiconductor manufacturing industry.\",\"PeriodicalId\":451,\"journal\":{\"name\":\"IEEE Transactions on Semiconductor Manufacturing\",\"volume\":\"37 4\",\"pages\":\"518-526\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-08-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Semiconductor Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10644123/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10644123/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Feature Extraction From Diffraction Images Using a Spatial Light Modulator in Scatterometry
The continuous miniaturization of semiconductor devices has increased the demand for advanced process control technologies. This process requires real-time measurement systems to monitor manufacturing parameters to ensure efficiency and high quality. This study introduces a novel optical module that uses a spatial light modulator to extract key-point intensity distributions from diffraction images in scatterometry. The efficacy of this method is demonstrated on a grating target with a pitch of 855 nm using a feature extraction algorithm that identifies key point locations based on calculated diffraction images. A particularly designed off-axis extraction pattern facilitates the acquisition of key-point intensity distributions. Moreover, incorporating a cylindrical lens into the optical setup reduces the image feature dimensionality, thereby decreasing the data storage space and enabling the output in a streamlined vector format conducive to further analysis. Experimental data on the development of this scatterometry-based optical module and the subsequent validation of the key-point extraction method indicate a maximum mean absolute error of 0.0080 and a cosine similarity consistently above 0.9999. This study integrates image analysis and measurement techniques by optics, providing a more efficient pathway for key-point extraction in diffraction images, offering the potential for improving real-time process monitoring in the semiconductor manufacturing industry.
期刊介绍:
The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.