利用 CNT 技术建立三元 D 触发器和移位寄存器模型的高效设计方法

IF 1.8 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Circuits, Systems and Signal Processing Pub Date : 2024-09-02 DOI:10.1007/s00034-024-02840-w
Trapti Sharma, Deepa Sharma
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引用次数: 0

摘要

新兴技术的发展促进了多值逻辑设计的普及,因为随着集成度的提高,多值逻辑设计可以增强电路的性能参数。本研究介绍了基于碳纳米管场效应晶体管(CNTFET)的三元移位寄存器设计,该设计通过采用带有复位输入的单边触发三元 D 触发器单元来实现。阈值电压与碳纳米管物理尺寸的关系被用于实现三元逻辑设计中的多阈值电压。具有复位功能的 D 型触发器设计是通过基于多路复用器的正负锁存器以主从架构实现的。此外,具有复位输入的 D 触发器单元被组合在一起,以构建三元逻辑串行输入串行输出(SISO)、并行输入并行输出(PIPO)和并行输入串行输出(PISO)寄存器。只有当复位输入为高电平时,输入与输出之间才会发生锁存,否则不会发生锁存。PISO 寄存器通过 NAND 逻辑实现加载和移位两种工作模式。考虑到 32 nm 的 Stanford CNTFET 模型,使用 HSPICE 模拟了使用 CNTFET 的拟议三元移位寄存器设计。结果表明,在 4 位寄存器设计中,SISO 设计的功耗和 PDP 与最近的同类设计相比提高了 70% 以上,PIPO 和 PISO 寄存器设计的功耗和 PDP 最高提高了 90%。Monte-Carlo 仿真结果表明,当工艺发生变化时,所提出的设计能够稳健、稳定地运行。
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Efficient Design Approaches to Model Ternary D-Flip-Flop and Shift Registers in CNT Technology

The advancement of emerging technologies favors the proliferation of multi-valued logic design as it offers enhancement of circuit performance parameters with increased level of integration. This work has presented carbon nanotube field effect transistor (CNTFET) based ternary shift register designs which are realized by employing single-edge triggered ternary D-flip-flop cells with reset input. The dependency of threshold voltage on carbon nanotube physical dimensions is used for the realization of multiple threshold voltages in ternary logic designs. The D-flip flop design with reset capability implementation is performed using multiplexer based positive and negative latches arranged in master–slave architecture. Further, the D-flip-flop cells with reset input are combined to construct Ternary logic serial input serial output (SISO), parallel input parallel output (PIPO) and parallel input serial output (PISO) registers. The latching of the input across the output happens only if the reset input is high otherwise no latching is performed. The PISO register is operating in two modes of loading and shifting realized using NAND logic. The proposed ternary shift register designs using CNTFETs are simulated using HSPICE considering the 32 nm Stanford CNTFET model. The results demonstrate that for 4-bit register design, power and PDP improvements of more than 70% are achieved for SISO designs and a maximum of 90% is attained for PIPO and PISO register designs as compared to recent counterparts. The Monte-Carlo simulation results indicate robust and stable operation of the proposed designs when subjected to process variations.

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来源期刊
Circuits, Systems and Signal Processing
Circuits, Systems and Signal Processing 工程技术-工程:电子与电气
CiteScore
4.80
自引率
13.00%
发文量
321
审稿时长
4.6 months
期刊介绍: Rapid developments in the analog and digital processing of signals for communication, control, and computer systems have made the theory of electrical circuits and signal processing a burgeoning area of research and design. The aim of Circuits, Systems, and Signal Processing (CSSP) is to help meet the needs of outlets for significant research papers and state-of-the-art review articles in the area. The scope of the journal is broad, ranging from mathematical foundations to practical engineering design. It encompasses, but is not limited to, such topics as linear and nonlinear networks, distributed circuits and systems, multi-dimensional signals and systems, analog filters and signal processing, digital filters and signal processing, statistical signal processing, multimedia, computer aided design, graph theory, neural systems, communication circuits and systems, and VLSI signal processing. The Editorial Board is international, and papers are welcome from throughout the world. The journal is devoted primarily to research papers, but survey, expository, and tutorial papers are also published. Circuits, Systems, and Signal Processing (CSSP) is published twelve times annually.
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