掺锡 CdS 微纳结构的制造、光谱特性和器件应用的最新进展

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2024-09-01 DOI:10.1088/1674-4926/24040041
Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu
{"title":"掺锡 CdS 微纳结构的制造、光谱特性和器件应用的最新进展","authors":"Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu","doi":"10.1088/1674-4926/24040041","DOIUrl":null,"url":null,"abstract":"One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"20 1","pages":""},"PeriodicalIF":4.8000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures\",\"authors\":\"Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu\",\"doi\":\"10.1088/1674-4926/24040041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":\"20 1\",\"pages\":\"\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/24040041\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-4926/24040041","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

一维半导体材料具有优异的光电特性,具有构建集成纳米器件的潜力。其中,掺杂Sn的CdS具有不同的微纳结构,包括纳米带、纳米线、梳状结构和超晶格等,具有丰富的光学微腔模式、优异的光学性能和广泛的应用领域。本文综述了各种掺锡 CdS 微米结构的研究进展,系统阐述了不同生长条件对掺锡 CdS 微纳结构制备的影响,以及这些结构的光谱特性和在某些领域的潜在应用。随着纳米技术的不断进步,掺Sn CdS微纳结构有望在光电子领域取得更多突破,并与其他领域形成交叉融合,共同推动科技和社会发展。
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Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures
One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
期刊最新文献
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