Integration of Self-Assembled Monolayers for Cobalt/Porous Low-k Interconnects

The integration of self-assembled monolayers (SAM) into cobalt (Co)/porous low-dielectric-constant (low-k) dielectric interconnects is studied in terms of electrical characteristics and reliability in this work. Experimental results indicated that SAM derived from 3-aminopropyltrimethoxysilane (APTMS) improved breakdown field, time-dependent dielectric breakdown, and adhesion for Co/porous low-k integrated interconnects. However, the improvement magnitude was not large as compared to SAM in the Cu/porous low-k integration. Therefore, the integration of SAM into Co/porous low-k interconnects has a positive effect; however, in order to further promote the efficiency of SAM for Co/porous low-k interconnects, the option of precursors for the growth of SAM is required.