{"title":"超宽带隙 (Al,Ga)N 和 β-(Al,Ga)2O3 合金中的缺陷与掺杂","authors":"Filip Tuomisto","doi":"10.1557/s43578-024-01407-4","DOIUrl":null,"url":null,"abstract":"<p>Si is the n-type dopant of choice for GaN and β-Ga<sub>2</sub>O<sub>3</sub>. However, in (Al,Ga)N and β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys, when the Al content is increased, the n-type conductivity produced by the added Si impurities is efficiently compensated. The experimentally determined critical Al fractions are about 70% for the (Al,Ga)N alloys and as low as 25% for the β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys. AlN and Al<sub>2</sub>O<sub>3</sub> are well known to be poorly n-type dopable even with Si, but the detailed compensation mechanisms in the alloys are not necessarily the same as in the compounds. This short review discusses recent research in Si-doped (Al,Ga)N and β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys in the light of the compensation phenomena caused by Si DX center and cation vacancy formation.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\n","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys\",\"authors\":\"Filip Tuomisto\",\"doi\":\"10.1557/s43578-024-01407-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Si is the n-type dopant of choice for GaN and β-Ga<sub>2</sub>O<sub>3</sub>. However, in (Al,Ga)N and β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys, when the Al content is increased, the n-type conductivity produced by the added Si impurities is efficiently compensated. The experimentally determined critical Al fractions are about 70% for the (Al,Ga)N alloys and as low as 25% for the β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys. AlN and Al<sub>2</sub>O<sub>3</sub> are well known to be poorly n-type dopable even with Si, but the detailed compensation mechanisms in the alloys are not necessarily the same as in the compounds. This short review discusses recent research in Si-doped (Al,Ga)N and β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys in the light of the compensation phenomena caused by Si DX center and cation vacancy formation.</p><h3 data-test=\\\"abstract-sub-heading\\\">Graphical abstract</h3>\\n\",\"PeriodicalId\":16306,\"journal\":{\"name\":\"Journal of Materials Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1557/s43578-024-01407-4\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43578-024-01407-4","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
硅是氮化镓和 β-Ga2O3 的 n 型掺杂剂。然而，在（Al,Ga）N 和 β-（Al,Ga）2O3 合金中，当铝含量增加时，由添加的硅杂质产生的 n 型导电性会得到有效补偿。实验测定的临界铝含量在 (Al,Ga)N 合金中约为 70%，而在β-(Al,Ga)2O3 合金中则低至 25%。众所周知，AlN 和 Al2O3 与硅的 n 型掺杂性很差，但合金中的详细补偿机制并不一定与化合物中的补偿机制相同。这篇简短的综述从 Si DX 中心和阳离子空位形成引起的补偿现象出发，讨论了掺杂了 Si 的（Al,Ga）N 和 β-（Al,Ga）2O3 合金的最新研究。
Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys
Si is the n-type dopant of choice for GaN and β-Ga2O3. However, in (Al,Ga)N and β-(Al,Ga)2O3 alloys, when the Al content is increased, the n-type conductivity produced by the added Si impurities is efficiently compensated. The experimentally determined critical Al fractions are about 70% for the (Al,Ga)N alloys and as low as 25% for the β-(Al,Ga)2O3 alloys. AlN and Al2O3 are well known to be poorly n-type dopable even with Si, but the detailed compensation mechanisms in the alloys are not necessarily the same as in the compounds. This short review discusses recent research in Si-doped (Al,Ga)N and β-(Al,Ga)2O3 alloys in the light of the compensation phenomena caused by Si DX center and cation vacancy formation.
期刊介绍：
Journal of Materials Research (JMR) publishes the latest advances about the creation of new materials and materials with novel functionalities, fundamental understanding of processes that control the response of materials, and development of materials with significant performance improvements relative to state of the art materials. JMR welcomes papers that highlight novel processing techniques, the application and development of new analytical tools, and interpretation of fundamental materials science to achieve enhanced materials properties and uses. Materials research papers in the following topical areas are welcome.
• Novel materials discovery
• Electronic, photonic and magnetic materials
• Energy Conversion and storage materials
• New thermal and structural materials
• Soft materials
• Biomaterials and related topics
• Nanoscale science and technology
• Advances in materials characterization methods and techniques
• Computational materials science, modeling and theory
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
