雾状化学气相沉积 Al2O3/AlGaN/GaN 结构中的界面态密度

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2024-08-21 DOI:10.35848/1347-4065/ad6abe

Keigo Bito, Masaki Ishiguro, Hadirah A. Radzuan, Hikaru Hiroshige, Tomohiro Motoyama, Yusui Nakamura, Joel T. Asubar, Zenji Yatabe

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引用次数: 0

摘要

通过环保型雾状 CVD 技术沉积了厚度均匀的 Al2O3 薄膜。所获得的 Al2O3 薄膜的光带隙值大于 6.5 eV，在 633 纳米波长处的折射率为 1.64。电容-电压（C-V）拟合方法与非线性最小二乘算法、频率色散、光辅助和拟议的反向偏压辅助 C-V 方法相结合，揭示了沿着雾状氧化铝/氮化铝界面的界面态密度范围为 1 × 1012 至 3 × 1013 cm-2eV-1。这些数值与已报道的原子层沉积 Al2O3 薄膜的数值相当。

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Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure

Uniform thickness Al₂O₃ thin films have been deposited by eco-friendly mist CVD. The obtained Al₂O₃ film has an optical band gap value of more than 6.5 eV and a refractive index of 1.64 at 633 nm. The combination of capacitance–voltage (C–V) fitting method with non-linear least-squares algorithm, frequency dispersion, photo-assisted, and proposed reverse bias-assisted C–V methods revealed interface state densities ranging from 1 × 10¹² to 3 × 10¹³ cm⁻²eV⁻¹ along the mist-Al₂O₃/AlGaN interface. These values are comparable to those reported for atomic layer deposited Al₂O₃ thin films.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS