{"title":"利用与 CMOS 兼容的局部准分子激光退火技术的多晶硅调制器","authors":"Kunhao Lei;Lichun Wang;Bo Tang;Maoliang Wei;Kangjian Bao;Zequn Chen;Yuting Ye;Boshu Sun;Jialing Jian;Lan Li;Junying Li;Hongtao Lin","doi":"10.1109/JLT.2024.3451963","DOIUrl":null,"url":null,"abstract":"In this paper, we demonstrated the improvement of response speed of doped-silicon modulators by localized excimer-laser annealing of the active region while preserving the integrity of the intrinsic waveguide. The racetrack modulator after laser annealing exhibits an extinction ratio of nearly 17 dB with a rising /falling time of 0.82/6.87 μs and a π phase shift power Pπ of 27.2 mW. The utilization of a low-temperature deposited polysilicon modulator combined with a localized excimer laser annealing scheme facilitates the monolithic integration of 3D optoelectronic chips.","PeriodicalId":16144,"journal":{"name":"Journal of Lightwave Technology","volume":"43 2","pages":"684-689"},"PeriodicalIF":4.8000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polysilicon Modulator Utilizing CMOS-Compatible Local Excimer Laser Annealing Technology\",\"authors\":\"Kunhao Lei;Lichun Wang;Bo Tang;Maoliang Wei;Kangjian Bao;Zequn Chen;Yuting Ye;Boshu Sun;Jialing Jian;Lan Li;Junying Li;Hongtao Lin\",\"doi\":\"10.1109/JLT.2024.3451963\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we demonstrated the improvement of response speed of doped-silicon modulators by localized excimer-laser annealing of the active region while preserving the integrity of the intrinsic waveguide. The racetrack modulator after laser annealing exhibits an extinction ratio of nearly 17 dB with a rising /falling time of 0.82/6.87 μs and a π phase shift power Pπ of 27.2 mW. The utilization of a low-temperature deposited polysilicon modulator combined with a localized excimer laser annealing scheme facilitates the monolithic integration of 3D optoelectronic chips.\",\"PeriodicalId\":16144,\"journal\":{\"name\":\"Journal of Lightwave Technology\",\"volume\":\"43 2\",\"pages\":\"684-689\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2024-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Lightwave Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10659095/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Lightwave Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10659095/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Polysilicon Modulator Utilizing CMOS-Compatible Local Excimer Laser Annealing Technology
In this paper, we demonstrated the improvement of response speed of doped-silicon modulators by localized excimer-laser annealing of the active region while preserving the integrity of the intrinsic waveguide. The racetrack modulator after laser annealing exhibits an extinction ratio of nearly 17 dB with a rising /falling time of 0.82/6.87 μs and a π phase shift power Pπ of 27.2 mW. The utilization of a low-temperature deposited polysilicon modulator combined with a localized excimer laser annealing scheme facilitates the monolithic integration of 3D optoelectronic chips.
期刊介绍:
The Journal of Lightwave Technology is comprised of original contributions, both regular papers and letters, covering work in all aspects of optical guided-wave science, technology, and engineering. Manuscripts are solicited which report original theoretical and/or experimental results which advance the technological base of guided-wave technology. Tutorial and review papers are by invitation only. Topics of interest include the following: fiber and cable technologies, active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; and systems, subsystems, new applications and unique field trials. System oriented manuscripts should be concerned with systems which perform a function not previously available, out-perform previously established systems, or represent enhancements in the state of the art in general.