用于非侵入式血氧监测的自滤波窄带有机光电探测器

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-22 DOI:10.1109/LED.2024.3447588
Muyi Fu;Yanwei Chen;Yunhao Cao;Zihao Lin;Xiye Yang;Sheng Dong;Kai Zhang;Fei Huang
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引用次数: 0

摘要

对医疗诊断、微型光谱学和光通信的需求日益增长,因此需要开发具有光谱选择性的小型光电探测器。窄带光电探测器是一种前景广阔的解决方案。我们采用激子解离窄化(EDN)策略制造了峰值分别为 660 纳米和 860 纳米的自滤波窄带有机光电探测器。在 860 纳米波长处,半最大全宽 (FWHM) 为 83.0 纳米,峰值 EQE 为 59%;在 660 纳米波长处,半最大全宽为 72.9 纳米,峰值 EQE 为 59%。该窄带光电探测器具有出色的稳定性,在室温空气中老化 280 天后,在 860 纳米波长下仍能保持{1}.{2}/次{10}^{12}}$ Jones 的高比检测率,在 660 纳米波长下仍能保持{7}.{6}/次{10}^{11}}$ Jones 的比检测率。通过将峰值分别为 660 纳米和 860 纳米的自滤波窄带光电探测器与红色和红外 LED 相集成,实现了对动脉 PPG 信号、血氧饱和度和心率的实时无创监测装置。
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Self-Filtering Narrowband Organic Photodetectors for Non-Invasive Blood-Oxygen Monitoring
Increasing demands on medical diagnostics, miniaturized spectroscopy, and optical communication raise the need for developing compact photodetectors with spectral selectivity. Narrowband photodetector stands out as a promising solution. Self-filtering narrowband organic photodetectors respectively peaked at 660 nm and 860 nm are fabricated following the exciton dissociation narrowing (EDN) strategy. A full width at half maximum (FWHM) of 83.0 nm with a peak EQE of 59% at 860 nm and 72.9 nm with a peak EQE of 59% at 660 nm are achieved. The narrow-band photodetectors show excellent stability that maintained a high specific detectivity of ${1}.{2}\times {10}^{{12}}$ Jones at 860 nm and ${7}.{6}\times {10}^{{11}}$ Jones at 660 nm after being aged in air at room temperature for 280 days. By integrating the self-filtering narrowband photodetectors peaked at 660 nm and 860 nm with red and infrared LEDs, respectively, a device for real-time non-invasive monitoring of arterial PPG signals, blood oxygen saturation, and heart rates was realized.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
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