基于 4H-SiC NMOSFET 的温度传感器,工作温度范围为 14K 至 481K

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-09-12 DOI:10.1109/LED.2024.3459049
Nicola Rinaldi;Alexander May;Mathias Rommel;Rosalba Liguori;Alfredo Rubino;Gian Domenico Licciardo;Luigi Di Benedetto
{"title":"基于 4H-SiC NMOSFET 的温度传感器,工作温度范围为 14K 至 481K","authors":"Nicola Rinaldi;Alexander May;Mathias Rommel;Rosalba Liguori;Alfredo Rubino;Gian Domenico Licciardo;Luigi Di Benedetto","doi":"10.1109/LED.2024.3459049","DOIUrl":null,"url":null,"abstract":"The experimental characteristics of a temperature sensor based on a 4H-SiC diode-connected lateral NMOSFET are shown in the range between 14K and 481K. The device is fully compatible with 4H-SiC CMOS technology. The analysis of the sensor characteristics reveals a main temperature dependence on the threshold voltage compared to the channel mobility. Due to the oxide/semiconductor interface traps, the sensor characteristic is divided in three temperature ranges to obtain a good linearity: in 14K \n<inline-formula> <tex-math>$\\leq $ </tex-math></inline-formula>\n T \n<inline-formula> <tex-math>$\\leq 200$ </tex-math></inline-formula>\nK, the sensitivity is 53.46mV/K, the rms error is 5.49K and the coefficient of determination is 0.9927 for a bias current of \n<inline-formula> <tex-math>$1.59\\mu $ </tex-math></inline-formula>\nA; instead, a current of \n<inline-formula> <tex-math>$100\\mu $ </tex-math></inline-formula>\nA permits to have a maximum coefficient of determination of 0.9708 with a sensitivity of 29.9mV/K for 200K < T \n<inline-formula> <tex-math>$\\leq 394$ </tex-math></inline-formula>\nK, and a linearity of 0.9926 with a sensitivity of 13.72mV/K at T >394K. Finally, for currents between 870nA and \n<inline-formula> <tex-math>$9\\mu $ </tex-math></inline-formula>\nA the linearity is higher than 0.95 in all temperature ranges.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2181-2184"},"PeriodicalIF":4.1000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10679237","citationCount":"0","resultStr":"{\"title\":\"A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K\",\"authors\":\"Nicola Rinaldi;Alexander May;Mathias Rommel;Rosalba Liguori;Alfredo Rubino;Gian Domenico Licciardo;Luigi Di Benedetto\",\"doi\":\"10.1109/LED.2024.3459049\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The experimental characteristics of a temperature sensor based on a 4H-SiC diode-connected lateral NMOSFET are shown in the range between 14K and 481K. The device is fully compatible with 4H-SiC CMOS technology. The analysis of the sensor characteristics reveals a main temperature dependence on the threshold voltage compared to the channel mobility. Due to the oxide/semiconductor interface traps, the sensor characteristic is divided in three temperature ranges to obtain a good linearity: in 14K \\n<inline-formula> <tex-math>$\\\\leq $ </tex-math></inline-formula>\\n T \\n<inline-formula> <tex-math>$\\\\leq 200$ </tex-math></inline-formula>\\nK, the sensitivity is 53.46mV/K, the rms error is 5.49K and the coefficient of determination is 0.9927 for a bias current of \\n<inline-formula> <tex-math>$1.59\\\\mu $ </tex-math></inline-formula>\\nA; instead, a current of \\n<inline-formula> <tex-math>$100\\\\mu $ </tex-math></inline-formula>\\nA permits to have a maximum coefficient of determination of 0.9708 with a sensitivity of 29.9mV/K for 200K < T \\n<inline-formula> <tex-math>$\\\\leq 394$ </tex-math></inline-formula>\\nK, and a linearity of 0.9926 with a sensitivity of 13.72mV/K at T >394K. Finally, for currents between 870nA and \\n<inline-formula> <tex-math>$9\\\\mu $ </tex-math></inline-formula>\\nA the linearity is higher than 0.95 in all temperature ranges.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 11\",\"pages\":\"2181-2184\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10679237\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10679237/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10679237/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

基于 4H-SiC 二极管连接横向 NMOSFET 的温度传感器在 14K 至 481K 范围内的实验特性如图所示。该器件与 4H-SiC CMOS 技术完全兼容。对传感器特性的分析表明,与沟道迁移率相比,阈值电压主要取决于温度。由于氧化物/半导体界面阱,传感器特性分为三个温度范围,以获得良好的线性:在 14K $\leq $ T $\leq 200$ K 时,灵敏度为 53.46mV/K,均方根误差为 5.49K,确定系数为 0.当偏置电流为 1.59mu $ A 时,测定系数为 0.9708,灵敏度为 29.9mV/K;当偏置电流为 100mu $ A 时,测定系数为 0.9926,灵敏度为 13.72mV/K。最后,当电流在 870nA 和 9$\mu $ A 之间时,线性度在所有温度范围内都高于 0.95。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K
The experimental characteristics of a temperature sensor based on a 4H-SiC diode-connected lateral NMOSFET are shown in the range between 14K and 481K. The device is fully compatible with 4H-SiC CMOS technology. The analysis of the sensor characteristics reveals a main temperature dependence on the threshold voltage compared to the channel mobility. Due to the oxide/semiconductor interface traps, the sensor characteristic is divided in three temperature ranges to obtain a good linearity: in 14K $\leq $ T $\leq 200$ K, the sensitivity is 53.46mV/K, the rms error is 5.49K and the coefficient of determination is 0.9927 for a bias current of $1.59\mu $ A; instead, a current of $100\mu $ A permits to have a maximum coefficient of determination of 0.9708 with a sensitivity of 29.9mV/K for 200K < T $\leq 394$ K, and a linearity of 0.9926 with a sensitivity of 13.72mV/K at T >394K. Finally, for currents between 870nA and $9\mu $ A the linearity is higher than 0.95 in all temperature ranges.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1