Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Zetian Mi
{"title":"室温下超窄线宽发射的隧道发光器件","authors":"Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Zetian Mi","doi":"10.1109/LED.2024.3456036","DOIUrl":null,"url":null,"abstract":"Light-emitting devices with ultra-narrow linewidth have important applications in high-precision measurements and emerging quantum technologies. Charge carriers in solid-state matrix often suffer from interactions with phonons, spin noise and drifting electric fields, which results in spectral diffusion and additional phase noise. Here we report an ultra-narrow linewidth (\n<inline-formula> <tex-math>$\\sim 76 \\; \\mu $ </tex-math></inline-formula>\neV) electroluminescence from molecular nitrogen species in the ambience at room temperature. Through detailed numerical calculation and experimental analysis, we show that the second positive system of nitrogen species can be excited by tunneling electrons field-emitted from a metal-insulator-semiconductor heterostructure on commercially available Si and GaN substrates. The tunneling light-emitting devices (TLED) feature an excellent scalability and devices with minimal lateral dimension of \n<inline-formula> <tex-math>$5 \\; \\mu $ </tex-math></inline-formula>\nm have been demonstrated. This work sheds light on the integration of atomic, molecular, and optical physics with the solid-state platform as well as novel quantum optoelectronics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature\",\"authors\":\"Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Zetian Mi\",\"doi\":\"10.1109/LED.2024.3456036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Light-emitting devices with ultra-narrow linewidth have important applications in high-precision measurements and emerging quantum technologies. Charge carriers in solid-state matrix often suffer from interactions with phonons, spin noise and drifting electric fields, which results in spectral diffusion and additional phase noise. Here we report an ultra-narrow linewidth (\\n<inline-formula> <tex-math>$\\\\sim 76 \\\\; \\\\mu $ </tex-math></inline-formula>\\neV) electroluminescence from molecular nitrogen species in the ambience at room temperature. Through detailed numerical calculation and experimental analysis, we show that the second positive system of nitrogen species can be excited by tunneling electrons field-emitted from a metal-insulator-semiconductor heterostructure on commercially available Si and GaN substrates. The tunneling light-emitting devices (TLED) feature an excellent scalability and devices with minimal lateral dimension of \\n<inline-formula> <tex-math>$5 \\\\; \\\\mu $ </tex-math></inline-formula>\\nm have been demonstrated. This work sheds light on the integration of atomic, molecular, and optical physics with the solid-state platform as well as novel quantum optoelectronics.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10675334/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10675334/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature
Light-emitting devices with ultra-narrow linewidth have important applications in high-precision measurements and emerging quantum technologies. Charge carriers in solid-state matrix often suffer from interactions with phonons, spin noise and drifting electric fields, which results in spectral diffusion and additional phase noise. Here we report an ultra-narrow linewidth (
$\sim 76 \; \mu $
eV) electroluminescence from molecular nitrogen species in the ambience at room temperature. Through detailed numerical calculation and experimental analysis, we show that the second positive system of nitrogen species can be excited by tunneling electrons field-emitted from a metal-insulator-semiconductor heterostructure on commercially available Si and GaN substrates. The tunneling light-emitting devices (TLED) feature an excellent scalability and devices with minimal lateral dimension of
$5 \; \mu $
m have been demonstrated. This work sheds light on the integration of atomic, molecular, and optical physics with the solid-state platform as well as novel quantum optoelectronics.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.