Yue Yang;Xumeng Zhang;Pei Chen;Lingli Cheng;Yanting Ding;Chao Li;Jie Yu;Qi Liu
{"title":"具有同态可塑性的全集成膜霍奇金-赫胥黎神经元","authors":"Yue Yang;Xumeng Zhang;Pei Chen;Lingli Cheng;Yanting Ding;Chao Li;Jie Yu;Qi Liu","doi":"10.1109/LED.2024.3456816","DOIUrl":null,"url":null,"abstract":"Artificial neurons based on the Hodgkin-Huxley (H-H) models could mimic the richest firing patterns, showing great potential in building high-intelligent systems. Emerging devices, such as NbO2-based threshold-switching devices, exhibit more advantages in constructing H-H neuron circuits compared to conventional transistors. However, the on-chip integration of the memristive H-H neuron circuit remains unexplored, limiting its practical applications in hardware. Here, we design and fabricate a fully integrated memristive H-H neuron circuit and achieve all-or-nothing, refractory period, integrator, class 1 excitation, tonic spiking, subthreshold oscillation, tonic bursting, and mixed-mode firing behaviors. We also demonstrate the homeostatic plasticity based on integrated H-H neuron, specifically, the neuron increases threshold spontaneously when receiving an excessively strong input to avoid the superexcitation in the neuron. This work verifies the feasibility of building an integrated memristive H-H neuron and lays the foundation for building high-bionic neuromorphic systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fully Integrated Memristive Hodgkin-Huxley Neurons With Homeostatic Plasticity\",\"authors\":\"Yue Yang;Xumeng Zhang;Pei Chen;Lingli Cheng;Yanting Ding;Chao Li;Jie Yu;Qi Liu\",\"doi\":\"10.1109/LED.2024.3456816\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Artificial neurons based on the Hodgkin-Huxley (H-H) models could mimic the richest firing patterns, showing great potential in building high-intelligent systems. Emerging devices, such as NbO2-based threshold-switching devices, exhibit more advantages in constructing H-H neuron circuits compared to conventional transistors. However, the on-chip integration of the memristive H-H neuron circuit remains unexplored, limiting its practical applications in hardware. Here, we design and fabricate a fully integrated memristive H-H neuron circuit and achieve all-or-nothing, refractory period, integrator, class 1 excitation, tonic spiking, subthreshold oscillation, tonic bursting, and mixed-mode firing behaviors. We also demonstrate the homeostatic plasticity based on integrated H-H neuron, specifically, the neuron increases threshold spontaneously when receiving an excessively strong input to avoid the superexcitation in the neuron. This work verifies the feasibility of building an integrated memristive H-H neuron and lays the foundation for building high-bionic neuromorphic systems.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10671568/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10671568/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Fully Integrated Memristive Hodgkin-Huxley Neurons With Homeostatic Plasticity
Artificial neurons based on the Hodgkin-Huxley (H-H) models could mimic the richest firing patterns, showing great potential in building high-intelligent systems. Emerging devices, such as NbO2-based threshold-switching devices, exhibit more advantages in constructing H-H neuron circuits compared to conventional transistors. However, the on-chip integration of the memristive H-H neuron circuit remains unexplored, limiting its practical applications in hardware. Here, we design and fabricate a fully integrated memristive H-H neuron circuit and achieve all-or-nothing, refractory period, integrator, class 1 excitation, tonic spiking, subthreshold oscillation, tonic bursting, and mixed-mode firing behaviors. We also demonstrate the homeostatic plasticity based on integrated H-H neuron, specifically, the neuron increases threshold spontaneously when receiving an excessively strong input to avoid the superexcitation in the neuron. This work verifies the feasibility of building an integrated memristive H-H neuron and lays the foundation for building high-bionic neuromorphic systems.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.