Jia Cheng Li;Ying Chen Li;Zi Chun Liu;Yuan Xiao Ma;Ye Liang Wang
{"title":"基于 CsMAFAPbIBr 包晶石的自整流电阻开关特性","authors":"Jia Cheng Li;Ying Chen Li;Zi Chun Liu;Yuan Xiao Ma;Ye Liang Wang","doi":"10.1109/LED.2024.3455372","DOIUrl":null,"url":null,"abstract":"Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA\n<inline-formula> <tex-math>$_{{0}.{83}}\\text {)}_{{0}.{95}}$ </tex-math></inline-formula>\nPb(I0.83Br\n<inline-formula> <tex-math>$_{{0}.{17}}\\text {)}_{{3}}$ </tex-math></inline-formula>\n perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for \n<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\n cycles and the retention time is over \n<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\n seconds at \n<inline-formula> <tex-math>$85~^{\\circ }$ </tex-math></inline-formula>\nC. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA\n<inline-formula> <tex-math>$_{{0}.{83}}\\text {)}_{{0}.{95}}$ </tex-math></inline-formula>\n Pb(I0.83Br\n<inline-formula> <tex-math>$_{{0}.{17}}\\text {)}_{{3}}$ </tex-math></inline-formula>\n. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device\",\"authors\":\"Jia Cheng Li;Ying Chen Li;Zi Chun Liu;Yuan Xiao Ma;Ye Liang Wang\",\"doi\":\"10.1109/LED.2024.3455372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA\\n<inline-formula> <tex-math>$_{{0}.{83}}\\\\text {)}_{{0}.{95}}$ </tex-math></inline-formula>\\nPb(I0.83Br\\n<inline-formula> <tex-math>$_{{0}.{17}}\\\\text {)}_{{3}}$ </tex-math></inline-formula>\\n perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for \\n<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\\n cycles and the retention time is over \\n<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\\n seconds at \\n<inline-formula> <tex-math>$85~^{\\\\circ }$ </tex-math></inline-formula>\\nC. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA\\n<inline-formula> <tex-math>$_{{0}.{83}}\\\\text {)}_{{0}.{95}}$ </tex-math></inline-formula>\\n Pb(I0.83Br\\n<inline-formula> <tex-math>$_{{0}.{17}}\\\\text {)}_{{3}}$ </tex-math></inline-formula>\\n. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10669083/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10669083/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device
Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA
$_{{0}.{83}}\text {)}_{{0}.{95}}$
Pb(I0.83Br
$_{{0}.{17}}\text {)}_{{3}}$
perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for
$10^{{4}}$
cycles and the retention time is over
$10^{{4}}$
seconds at
$85~^{\circ }$
C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA
$_{{0}.{83}}\text {)}_{{0}.{95}}$
Pb(I0.83Br
$_{{0}.{17}}\text {)}_{{3}}$
. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.