{"title":"具有亚微特斯拉平面内磁场探测能力的 4H-SiC 侧面磁晶体管","authors":"Hesham Okeil;Gerhard Wachutka","doi":"10.1109/LED.2024.3456752","DOIUrl":null,"url":null,"abstract":"In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching \n<inline-formula> <tex-math>$960 \\; \\mu $ </tex-math></inline-formula>\nA/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/\n<inline-formula> <tex-math>$\\sqrt {\\text {Hz}}$ </tex-math></inline-formula>\n is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify electron hole plasma modulation as the main operating principle.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669586","citationCount":"0","resultStr":"{\"title\":\"4H-SiC Lateral Magnetotransistor With Sub-Microtesla In-Plane Magnetic Field Detectivity\",\"authors\":\"Hesham Okeil;Gerhard Wachutka\",\"doi\":\"10.1109/LED.2024.3456752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching \\n<inline-formula> <tex-math>$960 \\\\; \\\\mu $ </tex-math></inline-formula>\\nA/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/\\n<inline-formula> <tex-math>$\\\\sqrt {\\\\text {Hz}}$ </tex-math></inline-formula>\\n is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify electron hole plasma modulation as the main operating principle.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669586\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10669586/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10669586/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
4H-SiC Lateral Magnetotransistor With Sub-Microtesla In-Plane Magnetic Field Detectivity
In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching
$960 \; \mu $
A/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/
$\sqrt {\text {Hz}}$
is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify electron hole plasma modulation as the main operating principle.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.