{"title":"基于拉什巴自旋轨道耦合调制层状半导体量子微结构的空间电子-自旋分离器","authors":"Mao-Wang Lu;Sai-Yan Chen;Xue-Li Cao;An-Qi Zhang","doi":"10.1109/LED.2024.3454235","DOIUrl":null,"url":null,"abstract":"Goos-Hänchen effect of electrons in a layered semiconductor quantum microstructure is explored. Thanks to Rashba spin-orbit coupling, GH shifts depend obviously on electron spins, causing the dynamic spin polarization in the spatial domain. Besides, this spin polarization can be modulated by the interfacial electric field or the layer thickness. These interesting findings may be helpful for design of the spatial electron-spin splitter.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2066-2069"},"PeriodicalIF":4.1000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spatial Electron-Spin Splitter Based on Rashba Spin-Orbit-Coupling Modulated Layered-Semiconductor Quantum Microstructure\",\"authors\":\"Mao-Wang Lu;Sai-Yan Chen;Xue-Li Cao;An-Qi Zhang\",\"doi\":\"10.1109/LED.2024.3454235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Goos-Hänchen effect of electrons in a layered semiconductor quantum microstructure is explored. Thanks to Rashba spin-orbit coupling, GH shifts depend obviously on electron spins, causing the dynamic spin polarization in the spatial domain. Besides, this spin polarization can be modulated by the interfacial electric field or the layer thickness. These interesting findings may be helpful for design of the spatial electron-spin splitter.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 11\",\"pages\":\"2066-2069\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10664498/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10664498/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Spatial Electron-Spin Splitter Based on Rashba Spin-Orbit-Coupling Modulated Layered-Semiconductor Quantum Microstructure
Goos-Hänchen effect of electrons in a layered semiconductor quantum microstructure is explored. Thanks to Rashba spin-orbit coupling, GH shifts depend obviously on electron spins, causing the dynamic spin polarization in the spatial domain. Besides, this spin polarization can be modulated by the interfacial electric field or the layer thickness. These interesting findings may be helpful for design of the spatial electron-spin splitter.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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