Enhanced Mobility in C8-BTBT Field-Effect Transistors With Iodine-Doping

Organic field-effect transistors (OFETs) are widely applied in the fields of flexible display and wearable devices. However, its mobility optimization is a major bottleneck. Here, enhanced mobility in organic dioctylbenzothienob en-zothiophene (C8-BTBT) OFETs is demonstrated with iodine doping. By optimizing the doping concentration, the carrier concentration at the metal/semiconductor interface markedly increases due to tunneling effects, generating a contact resistance (R $_{\text {C}}\text {)}$ reduced by $\sim 10^{{2}}$ , and increasing mobility from 1.4 to 10.4 cm ² V $^{-{1}}$ s $^{-{1}}$ . This work proposes an effective method to enhance the mobility of C8-BTBT OFETs.