{"title":"用于可扩展量子计算系统超导互连器件三维集成的新型晶圆级 Ta-Ta 直接热压焊接技术","authors":"Harsh Mishra;Satish Bonam;Vinit Kumar;Shiv Govind Singh","doi":"10.1109/LED.2024.3453174","DOIUrl":null,"url":null,"abstract":"As quantum computing evolves from small-scale qubit systems to more complex large-scale processors, the demand for individual qubit control and scalability will lead to the use of 3D integration and packaging technologies. Although advances in 3D integration in traditional CMOS technology are notable at room temperature, its potential in cryogenic environments, especially in quantum computing, remains largely unexplored. Superconducting qubit technology demands improvements in qubit relaxation and coherence time. Tantalum (Ta), renowned for its minimal loss, remarkable coherence time and superior stability, emerges as a promising candidate for superconducting materials. This study presents a novel approach by utilizing Ta-Ta thermo-compression bonding to create superconducting joints between wafers for vertical integration for the first time. A successful bonding temperature (500 °C) and pressure (0.3 MPa) results in the emergence of \n<inline-formula> <tex-math>$\\alpha $ </tex-math></inline-formula>\n-tantalum, which improves the coherence time significantly as reported earlier. The shear strength test shows a bond strength of 200 MPa which is a clear indication of a good bond between the two layers. Hence, we demonstrate the feasibility of achieving 3D integration of superconducting chips using this approach, thus opening doors for inventive quantum computing architectures.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel Wafer-Level Ta-Ta Direct Thermocompression Bonding for 3D Integration of Superconducting Interconnects for Scalable Quantum Computing System\",\"authors\":\"Harsh Mishra;Satish Bonam;Vinit Kumar;Shiv Govind Singh\",\"doi\":\"10.1109/LED.2024.3453174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As quantum computing evolves from small-scale qubit systems to more complex large-scale processors, the demand for individual qubit control and scalability will lead to the use of 3D integration and packaging technologies. Although advances in 3D integration in traditional CMOS technology are notable at room temperature, its potential in cryogenic environments, especially in quantum computing, remains largely unexplored. Superconducting qubit technology demands improvements in qubit relaxation and coherence time. Tantalum (Ta), renowned for its minimal loss, remarkable coherence time and superior stability, emerges as a promising candidate for superconducting materials. This study presents a novel approach by utilizing Ta-Ta thermo-compression bonding to create superconducting joints between wafers for vertical integration for the first time. A successful bonding temperature (500 °C) and pressure (0.3 MPa) results in the emergence of \\n<inline-formula> <tex-math>$\\\\alpha $ </tex-math></inline-formula>\\n-tantalum, which improves the coherence time significantly as reported earlier. The shear strength test shows a bond strength of 200 MPa which is a clear indication of a good bond between the two layers. Hence, we demonstrate the feasibility of achieving 3D integration of superconducting chips using this approach, thus opening doors for inventive quantum computing architectures.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10662944/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10662944/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Novel Wafer-Level Ta-Ta Direct Thermocompression Bonding for 3D Integration of Superconducting Interconnects for Scalable Quantum Computing System
As quantum computing evolves from small-scale qubit systems to more complex large-scale processors, the demand for individual qubit control and scalability will lead to the use of 3D integration and packaging technologies. Although advances in 3D integration in traditional CMOS technology are notable at room temperature, its potential in cryogenic environments, especially in quantum computing, remains largely unexplored. Superconducting qubit technology demands improvements in qubit relaxation and coherence time. Tantalum (Ta), renowned for its minimal loss, remarkable coherence time and superior stability, emerges as a promising candidate for superconducting materials. This study presents a novel approach by utilizing Ta-Ta thermo-compression bonding to create superconducting joints between wafers for vertical integration for the first time. A successful bonding temperature (500 °C) and pressure (0.3 MPa) results in the emergence of
$\alpha $
-tantalum, which improves the coherence time significantly as reported earlier. The shear strength test shows a bond strength of 200 MPa which is a clear indication of a good bond between the two layers. Hence, we demonstrate the feasibility of achieving 3D integration of superconducting chips using this approach, thus opening doors for inventive quantum computing architectures.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.