Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon
{"title":"嵌入式沟道铁电场效应晶体管的低频噪声特性","authors":"Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon","doi":"10.1109/LED.2024.3452776","DOIUrl":null,"url":null,"abstract":"This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage (\n<inline-formula> <tex-math>${V}_{\\text {TH}}\\text {)}$ </tex-math></inline-formula>\n is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency (\n<inline-formula> <tex-math>${f}_{\\text {c}}~\\approx ~480$ </tex-math></inline-formula>\n Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z \n<inline-formula> <tex-math>$\\approx ~1.5$ </tex-math></inline-formula>\n nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2118-2121"},"PeriodicalIF":4.1000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors\",\"authors\":\"Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon\",\"doi\":\"10.1109/LED.2024.3452776\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage (\\n<inline-formula> <tex-math>${V}_{\\\\text {TH}}\\\\text {)}$ </tex-math></inline-formula>\\n is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency (\\n<inline-formula> <tex-math>${f}_{\\\\text {c}}~\\\\approx ~480$ </tex-math></inline-formula>\\n Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z \\n<inline-formula> <tex-math>$\\\\approx ~1.5$ </tex-math></inline-formula>\\n nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 11\",\"pages\":\"2118-2121\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10662904/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10662904/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors
This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage (
${V}_{\text {TH}}\text {)}$
is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency (
${f}_{\text {c}}~\approx ~480$
Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z
$\approx ~1.5$
nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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