SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset

In this letter, a novel silicon-on-insulator (SOI) lateral Hall device (LHD) with deep trench fingers (DTFs) is proposed. The DTFs in magnetic-sensitive well mitigate the short-circuit effect and make current-related sensitivity (S $_{\text {I}}\text {)}$ insensitive to the signal electrode size. The SI of the proposed LHD is over 1000V/AT, the input resistance (R $_{\text {in}}\text {)}$ is around 40.5k $\Omega $ and offset is lower than 2.5mV. With four-phase spinning current method, the residual offset is reduced to $17~\mu $ V and the proposed LHD has high linearity output at a magnetic field from 10mT to 300mT. In addition, the proposed LHD presents high stability across temperature ranging from 25°C to 225°C.