使用辅助支撑梁的 Bent-TBTF 共振 MEMS 加速计

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-09-02 DOI:10.1109/LED.2024.3453324
Cheng Tu;Yi-Ming Pan;Zenghui Wang;Xiao-Sheng Zhang
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引用次数: 0

摘要

这封信展示了一种使用弯曲 TBTF 谐振器的高响应压电谐振 MEMS 加速度计。与传统的弯梁谐振加速度计不同,所提出的装置使用了两个辅助支撑梁,可以通过设计来控制 TBTF 谐振器的初始弯曲形状,从而改变其力感应行为。这些辅助支撑梁为操纵设备的线性工作范围提供了新的设计自由度,而这被认为是基于弯曲梁传感的谐振加速度计所固有的问题。通过将测量结果与有限元模拟结果进行比较,验证了拟议设计的有效性。演示的弯束-TBTF 谐振加速度计的响应率高达 2.92 kHz/g,占地面积为 3.1 mm×1.4 mm。通过对辅助支撑梁的铝覆盖面进行适当设计,所提出的装置在 -6 g 至 6 g 的相关加速度范围内实现了 2.7% 的良好非线性系数。
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A Bent-TBTF Resonant MEMS Accelerometer Using Auxiliary Supporting Beams
This letter demonstrates a high-responsivity piezoelectric resonant MEMS accelerometer using a bent-TBTF resonator. Different from the conventional bent-beam resonant accelerometers, the proposed device uses two auxiliary supporting beams that can be designed to control the initial bending shape of the TBTF resonator and thus alter its force sensing behavior. These auxiliary supporting beams provide a new design freedom for manipulating the linear operation range of the device, which was considered an inherent issue for the resonant accelerometers based on bent-beam sensing. The validity of the proposed design is verified by comparing the measured results to the finite-element simulations. The demonstrated bent-TBTF resonant accelerometer exhibits responsivity as large as 2.92 kHz/g with footprint of 3.1 mm $\times 1.4$ mm. By proper design of aluminum coverage of the auxiliary supporting beams, the proposed device achieves good nonlinearity factor of 2.7% in the interested acceleration range from −6 g to 6 g.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
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