Si-Meng Chen;Hirofumi Nishida;Sung-Lin Tsai;Takuya Hoshii;Kazuo Tsutsui;Hitoshi Wakabayashi;Edward Yi Chang;Kuniyuki Kakushima
{"title":"用于多电平运行的氧原子掺杂铁电 AIScN 电容器","authors":"Si-Meng Chen;Hirofumi Nishida;Sung-Lin Tsai;Takuya Hoshii;Kazuo Tsutsui;Hitoshi Wakabayashi;Edward Yi Chang;Kuniyuki Kakushima","doi":"10.1109/LED.2024.3453111","DOIUrl":null,"url":null,"abstract":"The effect of oxygen-atom incorporation in 50-nm-thick ferroelectric Al0.89Sc0.11N films was investigated. The fabricated films exhibited a high remanent polarization (\n<inline-formula> <tex-math>${P}_{\\text {r}})$ </tex-math></inline-formula>\n exceeding \n<inline-formula> <tex-math>$100~\\mu $ </tex-math></inline-formula>\nC/cm2, irrespective of the oxygen content studied. An increase in oxygen content led to a decrease in coercive field (\n<inline-formula> <tex-math>${E}_{\\text {c}})$ </tex-math></inline-formula>\n from 5.2 to 4.4 MV/cm and an increase in the static dielectric constant (\n<inline-formula> <tex-math>$\\varepsilon _{\\text {i}})$ </tex-math></inline-formula>\n from 15 to 19. This was likely due to the formation of substitute O and Al vacancy complex defects to ease N-atom displacement. Additionally, higher oxygen content resulted in imprint effect elimination, leakage current reduction, and breakdown field (\n<inline-formula> <tex-math>${E}_{\\text {BD}})$ </tex-math></inline-formula>\n enhancement, which are beneficial for ferroelectric memory applications. The gentle and linear relationship between \n<inline-formula> <tex-math>${P}_{\\text {r}}$ </tex-math></inline-formula>\n and the electric field (\n<inline-formula> <tex-math>${E})$ </tex-math></inline-formula>\n enabled precise control of partial polarization switching, supporting multi-level operation. Although issues related to fatigue and endurance cycles remain to be addressed, the high \n<inline-formula> <tex-math>${P}_{\\text {r}}$ </tex-math></inline-formula>\n and potential for multi-level operation are suitable for crossbar-based analog in-memory computing.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10662902","citationCount":"0","resultStr":"{\"title\":\"Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation\",\"authors\":\"Si-Meng Chen;Hirofumi Nishida;Sung-Lin Tsai;Takuya Hoshii;Kazuo Tsutsui;Hitoshi Wakabayashi;Edward Yi Chang;Kuniyuki Kakushima\",\"doi\":\"10.1109/LED.2024.3453111\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of oxygen-atom incorporation in 50-nm-thick ferroelectric Al0.89Sc0.11N films was investigated. The fabricated films exhibited a high remanent polarization (\\n<inline-formula> <tex-math>${P}_{\\\\text {r}})$ </tex-math></inline-formula>\\n exceeding \\n<inline-formula> <tex-math>$100~\\\\mu $ </tex-math></inline-formula>\\nC/cm2, irrespective of the oxygen content studied. An increase in oxygen content led to a decrease in coercive field (\\n<inline-formula> <tex-math>${E}_{\\\\text {c}})$ </tex-math></inline-formula>\\n from 5.2 to 4.4 MV/cm and an increase in the static dielectric constant (\\n<inline-formula> <tex-math>$\\\\varepsilon _{\\\\text {i}})$ </tex-math></inline-formula>\\n from 15 to 19. This was likely due to the formation of substitute O and Al vacancy complex defects to ease N-atom displacement. Additionally, higher oxygen content resulted in imprint effect elimination, leakage current reduction, and breakdown field (\\n<inline-formula> <tex-math>${E}_{\\\\text {BD}})$ </tex-math></inline-formula>\\n enhancement, which are beneficial for ferroelectric memory applications. The gentle and linear relationship between \\n<inline-formula> <tex-math>${P}_{\\\\text {r}}$ </tex-math></inline-formula>\\n and the electric field (\\n<inline-formula> <tex-math>${E})$ </tex-math></inline-formula>\\n enabled precise control of partial polarization switching, supporting multi-level operation. Although issues related to fatigue and endurance cycles remain to be addressed, the high \\n<inline-formula> <tex-math>${P}_{\\\\text {r}}$ </tex-math></inline-formula>\\n and potential for multi-level operation are suitable for crossbar-based analog in-memory computing.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10662902\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10662902/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10662902/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation
The effect of oxygen-atom incorporation in 50-nm-thick ferroelectric Al0.89Sc0.11N films was investigated. The fabricated films exhibited a high remanent polarization (
${P}_{\text {r}})$
exceeding
$100~\mu $
C/cm2, irrespective of the oxygen content studied. An increase in oxygen content led to a decrease in coercive field (
${E}_{\text {c}})$
from 5.2 to 4.4 MV/cm and an increase in the static dielectric constant (
$\varepsilon _{\text {i}})$
from 15 to 19. This was likely due to the formation of substitute O and Al vacancy complex defects to ease N-atom displacement. Additionally, higher oxygen content resulted in imprint effect elimination, leakage current reduction, and breakdown field (
${E}_{\text {BD}})$
enhancement, which are beneficial for ferroelectric memory applications. The gentle and linear relationship between
${P}_{\text {r}}$
and the electric field (
${E})$
enabled precise control of partial polarization switching, supporting multi-level operation. Although issues related to fatigue and endurance cycles remain to be addressed, the high
${P}_{\text {r}}$
and potential for multi-level operation are suitable for crossbar-based analog in-memory computing.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.