关于 Klystrons 谐振腔中装配间隙影响的研究

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-23 DOI:10.1109/LED.2024.3448452
Z. X. Su;J. C. Cai;P. C. Yin;D. C. Chen;J. Zhang;X. K. Zhang;C. Zhang;L. Zeng;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei
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引用次数: 0

摘要

在对 S 波段多波束速调管(MBK)谐振腔进行测试期间,观察到一个有趣的实验现象:谐振腔的测量欧姆品质因数({Q}_{0}}$ )出奇地低(约 200,设计值为 5090)。这促使我们进行了深入研究,发现低{Q}_{0}}$是由于谐振腔周边存在一个小间隙,这是机械设计不慎造成的。该装配间隙的拓扑结构类似于极细的同轴线。为了进一步研究这种装配间隙的影响,我们建立了理论和数值模型,定量分析同心/异心装配间隙对腔${Q}_{{0}}$、场不对称、分流阻抗、模式竞争等的影响。分析表明,影响 ${Q}_{0}}$ 的主要因素是小间隙的长度。同心度和宽度分别主要影响对称性和并联阻抗。分析结果与实验结果吻合。基于上述发现,我们提出了一种新方法,通过采用适当长、相对窄的间隙(其半径的 1/1000,即使在最坏的情况下也能确保同心度)来方便地降低谐振腔的 ${Q}_{0}}$,从而促进宽带 klystrons 的发展。
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Investigation on the Effects of Assembly Gaps in the Resonant Cavity of Klystrons
During the test of an S-band multibeam klystron (MBK) resonant cavity, an interesting experimental phenomenon was observed: the measured ohmic quality factor ( ${Q}_{{0}}$ ) of the cavity was surprisingly low (around 200, design value of 5090). This prompted an in-depth investigation, revealing that the low ${Q}_{{0}}$ was due to the presence of a small gap on the perimeter of the resonant cavity, which resulted from an inadvertent mechanical design. The topology of this assembly gap was similar to an extremely thin coaxial line. To further investigate the impact of such assembly gap, theoretical and numerical models were developed to quantitatively analyze the effect of concentric/eccentric assembly gap on the cavity ${Q}_{{0}}$ , field asymmetry, the shunt impedance, mode competition, etc. The analysis indicates that the primary factor affecting ${Q}_{{0}}$ is the length of the small gap. The concentricity and width mainly influence the symmetry and shunt impedance, respectively. The analysis showed good agreement with the experimental results. Based on the above findings, a new approach was proposed to conveniently reduce the ${Q}_{{0}}$ of the resonant cavity via employing an appropriately long, relatively narrow gap (1/1000 of its radii, to ensure concentricity even in the worst scenario), thereby facilitating the development of broadband klystrons.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
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